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  • 1985-1989  (7)
  • 1
    Electronic Resource
    Electronic Resource
    Fabrication and characterization of lateral InP/InGaAsP heterojunctions and bipolar transistors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2318-2320 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the fabrication of lateral InP/InGaAsP heterojunctions using both wet chemical and in situ melt-back etching and regrowth to form the device junctions. The current/voltage characteristics of the melt-back-etched and regrown heterojunctions exhibit ideality factors as low as 1.25. In addition, we have fabricated lateral heterojunction bipolar transistors with 2 μm base widths which exhibit a current gain of 6. These results indicate that regrown heterojunctions have adequate injection efficiency to form the active region of devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101114
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Transport properties of two-dimensional electron gas systems in delta-doped Si:In0.53Ga0.47As grown by organometallic chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 457-459 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the transport properties of a two-dimensional electron gas formed in delta-doped In0.53 Ga0.47 As grown by metalorganic chemical vapor deposition technique. Very high free-electron concentrations of 1.4×1013 and 9.6×1012 cm−2 have been obtained at 300 and 77 K, respectively. Hall mobilities of 9300 and 14 600 cm2 /V s were measured with carrier concentrations of 3.7×1012 and 3.0×1012 cm−2 at 300 and 77 K, respectively. This is a factor of 3 higher than is expected for homogeneously doped materials having a similar doping. Schubnikov–de Haas oscillations confirmed the two-dimensional nature of the electronic structure in these delta-doped materials, and electron effective masses were determined from cyclotron resonance measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100951
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Tunnel injection into a Wannier–Stark ladder (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 647-649 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe tunneling measurements of the electronic states of superlattices in which an electric field has destroyed the miniband structure. The tunneling characteristics reveal that the minibands collapse into localized Wannier–Stark states, which can be resolved in the first two quantum wells of the superlattice. The positions can be accounted for quantitatively by a combination of electrostatic and quantum mechanical effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100906
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Resonant tunneling in crossed electric and magnetic fields (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1469-1471 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A wide (80 nm) double-barrier resonant tunneling structure shows 25 features in the current-voltage characteristic associated with resonances in the quantum well. When a transverse magnetic field is applied to the structure, the features weaken and shift to higher energies. We give a quantum mechanical description of this phenomenon which is able to account quantitatively for the magnitude of the shifts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101347
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Hot-electron transport in a graded band-gap base heterojunction bipolar transistor (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 490-492 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report the direct observation of electron heating in an electric field using hot-electron spectroscopy. The device structure used for the study was a graded band-gap base heterojunction bipolar transistor, fabricated in the GaAs/AlGaAs semiconductor alloy system. A thermal electron distribution at 4.2 K was injected from the emitter into the base of a transistor that was compositionally graded to yield a quasielectric field of 20 kV cm−1 . The equilibrium electron distribution was heated by the electric field and could be characterized at the end of the 900 A(ring) base region by an effective electron temperature of 650 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99877
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Quantum interference effects in GaAs/GaAlAs bulk potential barriers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1578-1580 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed a large number of oscillations (10) in the current/voltage characteristic of GaAs/GaAlAs triangular potential barriers due to quantum interference effects. When an exact number of periods of a standing wave is present in the barrier there is a minimum in the transmission coefficient for electrons. As the bias is changed the electron wavelength is changed and there will once again be a minimum when the next complete period of the standing wave is incorporated. The observation of this quantum interference effect enables us to conclude that the scattering rate for hot electrons, high in the energy band of GaAs, is much less than previously assumed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99086
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Tunneling measurement of the density of states of a superlattice (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 391-393 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the current-voltage characteristics of GaAs/AlGaAs samples consisting of an electron injector, a wide AlGaAs tunnel barrier, and a strongly coupled superlattice. The bias determines the energy of electrons injected into the superlattice, and the resulting tunnel current shows pronounced structure associated with minibands and band gaps. The position of the bands is in quantitative agreement with theory, and we resolve minibands with energies both below and above the AlGaAs conduction-band offset.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99888
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    Paper (German National Licenses)
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