ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated the transport properties of a two-dimensional electron gas formed in delta-doped In0.53 Ga0.47 As grown by metalorganic chemical vapor deposition technique. Very high free-electron concentrations of 1.4×1013 and 9.6×1012 cm−2 have been obtained at 300 and 77 K, respectively. Hall mobilities of 9300 and 14 600 cm2 /V s were measured with carrier concentrations of 3.7×1012 and 3.0×1012 cm−2 at 300 and 77 K, respectively. This is a factor of 3 higher than is expected for homogeneously doped materials having a similar doping. Schubnikov–de Haas oscillations confirmed the two-dimensional nature of the electronic structure in these delta-doped materials, and electron effective masses were determined from cyclotron resonance measurements.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100951