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  • 1985-1989  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    The electric field induced photoluminescence properties of GaAs/AlxGa1−xAs quantum-well structures grown by molecular-beam epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 644-647 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence spectra were measured with molecular-beam epitaxy grown layers containing five different single quantum wells in an electric field. The photoluminescence intensity changed with the applied bias voltage in various ways according to the well width. An anti-Stokes shift in the peak energy was observed with the 2- and 3-nm quantum wells, while normal quantum confined Stark shifts were observed in the quantum wells with larger widths. These results were qualitatively interpreted in terms of the recombination rates both at the hetero-interfaces and in the quantum wells. Experimental results suggest that the impurity concentration at an interface between AlGaAs and an overlying GaAs layer is higher than that at an interface between GaAs and an overlying AlGaAs layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339793
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    A new doping superlattice photodetector (1985)
    Springer
    Applied physics 37 (1985), S. 47-56 
    Details
    ISSN: 1432-0630
    Keywords: 85.60.Dw ; 72.20.Jv ; 71.25.Tn
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A new GaAs photodetector with high sensitivity in the whole 0.8–1.4μm wavelength range has been fabricated from totally depleted GaAs doping superlattices grown by molecular beam epitaxy. Photoexcited electrons and holes are separated in real space by the space-charge field of the doping superlattice immediately after excitation, yielding a high quantum efficiency of this device. Because of the complete depletion, the doping superlattice behaves like a highly resistive material, which allows application of high electric field along the layers via selectiven + — andp + -electrodes. The sensitivity of this device at 1.3 μm reaches more than 90% of the original band edge response at 0.85 μm, and the external quantum efficiency amounts to 65% at 0.85 μm. This excellent photoresponse at longer wavelengths arises from an extremely high electric field composed of the intrinsic space charge field and applied external field, and from the existence of pronounced tail states in the forbidden gap region of the superlattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617868
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Low-temperature photoluminescence of MBE-grown GaAs subject to an electric field (1986)
    Springer
    Applied physics 39 (1986), S. 21-30 
    Details
    ISSN: 1432-0630
    Keywords: 78.55.-m ; 78.50.-w ; 68.55.+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Low-temperature photoluminescence of GaAs has been investigated in MBE-grown Al x Ga1−x As-GaAs single heterojunctions subject to an electric field. No peak energy shift is observed in the emission lines due to free excitons and excitons bound to isolated centers when the electric field is applied. In contrast, the excitonic lines arising from the previously described defect-induced bound exciton (DIBX) transitions exhibit a prominent low-energy shift when the electric field is increased. We attribute these lines to excitons bound to acceptor pairs. The excitons bound to distant pairs have smaller binding energies than those bound to closer pairs. They are, therefore, easily dissociated in a weak electric field. The electrons and holes thus dissociated may again be trapped by closer pairs, which results in a low-energy shift of the overall spectrum. The photocurrent measured as a function of the electric field supports Dingle's rule for the valence bandedge discontinuity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01177160
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    Paper (German National Licenses)
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