ISSN:
1618-2650
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
Notes:
Summary VLSI devices are almost exclusively fabricated on Czochralski (CZ) silicon containing high concentrations of interstitially dissolved oxygen ([Oi] ∼ 5×1017−1×1018 cm−3) which acts as getter for metallic impurities. Extensive analytical characterization is indispensable to study diffusion and precipitation of oxygen. This paper reports on the combination of fourier transform infrared absorption spectroscopy (FTIR), inert gas fusion analysis (IGFA) and secondary ion mass spectrometry (SIMS). It is shown that the combined use of these methods enables an extensive quantitative characterization of oxygen in silicon. The bulk oxygen content of high-resistivity material is routinely determined by FTIR and IGFA. In heavily doped substrates IR-absorption of free carriers is occurring. Thus only IGFA and SIMS can be applied. Lateral distribution analysis can be performed with each of the three methods, although the resolution of SIMS is substantially higher. Only SIMS can be used to study oxygen diffusion and precipitation during different process steps by means of depth profiling. For bulk analysis an excellent agreement between the three methods is obtained. The detection limits for these methods are in the range of 1–3×1016 cm−3). The reproducibility of SIMS and IGFA is improved by methodological developments to a value of ±3%. Also an accuracy of better than 10% rel. can than be achieved.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00572379
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