Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
66 (1989), S. 1375-1381
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Subsurface damage in GaAs processed by a Ga+ focused ion-beam-assisted Cl2 etching is studied by photoluminescence (PL) measurement. The PL intensity of the processed sample decreased to (1)/(30) – (1)/(40) compared to that of the unprocessed sample. The recovery of PL intensity by a step removal of the damaged layer is observed as a function of the removed layer thickness. The removal of a 0.7-μm-thick surface layer enables the PL intensity to be recovered perfectly, which leads to the postulate that the damaged layer thickness is 0.7 μm at least, which is much larger than the ion range (about 0.01 μm). The recovery of PL intensity is analyzed on a one-dimensional model in the direction normal to the sample surface. Computer simulations of PL intensity are carried out. The calculated result fully explains the experimental PL intensity recovery as a function of the removed layer thickness, which gives the profile of subsurface damage in the sample.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.344439
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