Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 1518-1520
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Metal Schottky barrier contacts to p-type (100) GaAs are described in which a large Schottky barrier height φB is attained by using a very thin Si or Ge interface layer to influence the interface Fermi energy EiF. The metals investigated are Au, Cr, Mn, Ni, and Al. Au, Cr, and Mn contacts have φB values from 0.7 to 0.9 eV when ∼15 A(ring) Si and Ge interlayers are made heavily n type. Ni and Al contact φB values were limited to 0.6–0.7 eV. X-ray photoemission spectroscopy was used to obtain the EiF and interface composition during contact formation; the φB for the corresponding thick contacts was measured by current-voltage and capacitance-voltage methods.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99943
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