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  • 1
    Electronic Resource
    Electronic Resource
    Measurement of GaAs/InP and InAs/InP heterojunction band offsets by x-ray photoemission spectroscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1878-1880 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The unstrained valence-band offset ΔEv for the x=0 and x=1 end points of the InxGa1−xAs/InP (100) heterojunction system has been measured by x-ray photoemission spectroscopy (XPS). Although the GaAs/InP and InAs/InP interfaces are strained because of lattice mismatch, the ΔEv values obtained by the XPS measurement method used are characteristic of an unstrained interface. Values of ΔEv (GaAs/InP)=0.19 eV and ΔEv (InAs/InP)=0.31 eV are observed. A linear interpolation between the x=0 and x=1 values gives ΔEv (In0.53 Ga0.47As/ InP)=0.25 eV for the x=0.53 lattice-matched interface (ΔEc /ΔEv =58/42).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101246
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  • 2
    Electronic Resource
    Electronic Resource
    Metal Schottky barrier contacts to alpha 6H-SiC (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4757-4760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of Schottky barrier contacts to n-type 6H-SiC for a number of metals chosen to include a variety of physical and chemical properties has been investigated. The metals (Pd, Au, Ag, Tb, Er, Mn, Al, and Mg) were deposited onto room temperature surfaces terminated with a submonolayer coverage of oxygen. The metal/6H-SiC interface chemistry and Schottky barrier height φB during contact formation were obtained with x-ray photoemission spectroscopy; the electrical properties of subsequently formed thick contacts were characterized by current-voltage and capacitance-voltage techniques. The øB values for these metals extend over a wide 1.3 eV range. To a varying degree φB depends on the 6H-SiC crystal face (Si vs C). Mg and Al (Si face of latter) have φB=0.3 eV, a value which is suitable for nonalloyed ohmic contacts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352086
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  • 3
    Electronic Resource
    Electronic Resource
    Schottky barrier height of metal contacts to p-type alpha 6H-SiC (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4548-4550 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A survey of metal (Pd, Ni, Au, Ag, Mg, Ti, and Al) Schottky barrier contact formation to p-type Si-face (0001) and C-face (0001¯) 6H-SiC by using x-ray photoemission spectroscopy is reported. The Schottky barrier height φB ranges from 1.17 to 2.56 eV and is influenced by the contact metal work function and the 6H-SiC crystal face. A comparison with prior φB values for n-type material indicates that for similarly prepared metal/6H-SiC interfaces (including those which have been annealed) φBp and φBn sum to the 6H-SiC band gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355948
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  • 4
    Electronic Resource
    Electronic Resource
    Metal contacts to p-type GaAs with large Schottky barrier heights (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1518-1520 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal Schottky barrier contacts to p-type (100) GaAs are described in which a large Schottky barrier height φB is attained by using a very thin Si or Ge interface layer to influence the interface Fermi energy EiF. The metals investigated are Au, Cr, Mn, Ni, and Al. Au, Cr, and Mn contacts have φB values from 0.7 to 0.9 eV when ∼15 A(ring) Si and Ge interlayers are made heavily n type. Ni and Al contact φB values were limited to 0.6–0.7 eV. X-ray photoemission spectroscopy was used to obtain the EiF and interface composition during contact formation; the φB for the corresponding thick contacts was measured by current-voltage and capacitance-voltage methods.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99943
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  • 5
    Electronic Resource
    Electronic Resource
    Metal contacts to GaAs with 1 eV Schottky barrier height (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1794-1796 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal Schottky barrier contacts to n-type (100) GaAs are described in which a 1 eV Schottky barrier height φB is achieved by using a very thin Si interface layer to influence the interface Fermi energy EiF. The metals investigated are Au, Cr, and Ti. The contact structure consists of a thick metal in combination with a ∼15–30 A(ring) heavily p-type Si interface layer. The EiF and interface composition during initial contact formation were obtained by x-ray photoemission spectroscopy (XPS); the φB for the corresponding thick contacts was measured by current-voltage (I-V) and capacitance-voltage (C-V) techniques. The XPS, I-V, and C-V measurements gave consistent results. The 1 eV φB for the Si interface layer contact structure is independent of the contact metal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99628
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  • 6
    Electronic Resource
    Electronic Resource
    Measurement of InP/In0.53Ga0.47As and In0.53Ga0.47As/In0.52Al0.48As heterojunction band offsets by x-ray photoemission spectroscopy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 372-378 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoemission spectroscopy (XPS) has been used to measure the valence-band offset ΔEv for the lattice-matched InP/ In0.53Ga0.47As and In0.53Ga0.47As/ In0.52Al0.48As heterojunction interfaces. The heterojunctions were formed by molecular-beam epitaxy. We obtain values of ΔEv (InP/In0.53Ga0.47As) =0.34 eV (ΔEc/ ΔEv=43/57) and ΔEv (In0.53Ga0.47As/ In0.52Al0.48As) =0.22 eV (ΔEc/ ΔEv =68/32) for the respective interfaces. By combining these measurements with available XPS ΔEv (InP/ In0.52Al0.48As) data we find that band offset transitivity is satisfied. Accordingly, the band offsets for heterojunction pairs formed from InP, In0.53Ga0.47As, and In0.52Al0.48As are not influenced by interface specific effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347724
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  • 7
    Electronic Resource
    Electronic Resource
    Schottky barrier height and interface chemistry of annealed metal contacts to alpha 6H-SiC: Crystal face dependence (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2685-2687 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties and interface chemistry of unannealed and annealed Ni, Ti, and Al contacts to both Si (0001) and C (0001¯) terminated faces of 6H-SiC are compared by using x-ray photoemission spectroscopy, current-voltage, and capacitance-voltage data. For annealing temperatures in the 400 to 600 °C range Ni and Ti contacts have significantly more dissociation of interface SiC and formation of reaction products for the C-face than the Si-face. The chemical reactivity of the Al contact was limited and equal for both faces. Stability of the Schottky barrier height with annealing, which has a wide variation according to metal and face, is not correlated with the degree of metal/6H-SiC interface chemical reactivity
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109257
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  • 8
    Electronic Resource
    Electronic Resource
    Measurement of AlN/GaN (0001) heterojunction band offsets by x-ray photoemission spectroscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2879-2881 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoemission spectroscopy has been used to measure the valence band offset ΔEv for the AlN/GaN (0001) heterojunction interface. The heterojunction samples were grown by reactive molecular beam epitaxy on 6H–SiC (0001) substrates. A nested interface band alignment with ΔEv=1.36±0.07 eV is obtained (ΔEc/ΔEv=52/48). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116355
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  • 9
    Electronic Resource
    Electronic Resource
    Formation and Schottky barrier height of metal contacts to β-SiC (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 557-559 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of Schottky barrier contacts to n-type β-SiC(100) was systematically investigated for several metals with various physical and chemical properties. The metals (Pd, Au, Co, Ti, Ag, Tb, and Al) were deposited onto oxygen terminated (∼1 monolayer) surfaces. Metal/β-SiC interface chemistry and Schottky barrier height φB during contact formation were obtained by x-ray photoemission spectroscopy; the corresponding electrical properties of thick contacts were characterized by capacitance-voltage and current-voltage methods. The metal/β-SiC interface is unreactive at room temperature. X-ray photoemission spectroscopy and electrical measurements demonstrate that these metal contacts exhibit a wide range of φB , 0.95–0.16 eV; within this range an individual contact φB value depends strongly on the metal work function in general accord with the Schottky–Mott limit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102744
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