Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
75 (1994), S. 4548-4550
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A survey of metal (Pd, Ni, Au, Ag, Mg, Ti, and Al) Schottky barrier contact formation to p-type Si-face (0001) and C-face (0001¯) 6H-SiC by using x-ray photoemission spectroscopy is reported. The Schottky barrier height φB ranges from 1.17 to 2.56 eV and is influenced by the contact metal work function and the 6H-SiC crystal face. A comparison with prior φB values for n-type material indicates that for similarly prepared metal/6H-SiC interfaces (including those which have been annealed) φBp and φBn sum to the 6H-SiC band gap.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.355948
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