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  • 1985-1989  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Magnetophotoluminescence characterization of residual donors in GaAs grown by metalorganic chemical vapor deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3205-3209 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The residual donor species in undoped GaAs epilayers grown by metalorganic chemical vapor deposition have been characterized by magnetophotoluminescence (MPL) measurements at high magnetic fields (7 T). Most samples were grown using trimethylgallium and arsine, but samples grown using the liquid group-V source t-butylarsine were also studied. The results show good agreement with identifications previously made in high-purity samples (NA+ND≤5×1014 cm−3) at zero magnetic field, but with greatly improved spectral resolution and signal levels. With the MPL technique, residual donor species were resolved even in relatively impure samples (NA+ND=1×1016) for which no information was obtained at zero magnetic field. For the samples grown with arsine, Ge donors were observed to predominate in the high-purity samples, but Si was the dominant donor in the lower-purity samples. The Si impurity was traced to contamination from a quartz baffle in the growth chamber. Lower levels of sulfur donors were observed in many samples. Sulfur was found to be the second most predominant donor after Ge in samples grown with t-butylarsine.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341537
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence identification of residual donors in undoped GaAs grown by metalorganic chemical vapor deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 401-403 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photoluminescence technique was used to identify residual donors in the 1014 cm−3 range in high-purity GaAs grown by metalorganic chemical vapor deposition. The measurements were taken at zero magnetic field. A narrow-linewidth tunable laser was used to resonantly enhance a specific narrow-linewidth "two-electron'' satellite line of the donor-bound exciton, enabling determination of the 1s-to-2s donor energy separations. Ge was identified as the dominant residual donor. Lower levels of the donors X1 and X2 were observed in some samples. These are attributed to Si (or possibly Sn) and S donors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99479
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition of high-purity GaAs using tertiarybutylarsine (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2029-2031 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of high-purity gallium arsenide using tertiarybutylarsine (TBA) and trimethylgallium is reported. The availability of high-purity TBA has permitted the growth of material with liquid-nitrogen mobilities of up to 80 000 cm2/V s, the highest value yet reported for growth with any alkyl arsine. The residual donor species have been identified by magnetophotoluminescence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101182
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    Paper (German National Licenses)
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