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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 6477-6493 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: In order to address the problem of three-body interactions in gas–surface scattering, we considered the collision of a He atom with the (0001) surface of graphite coated by a monolayer of Xe. To eliminate the uncertainties connected with errors in the two-body He–Xe interaction, we determined the latter by crossed-beam differential collision cross-section measurements performed at two energies (67.2 and 22.35 meV). These scattering data together with room-temperature bulk diffusion data are then fitted with a Hartree–Fock–dispersion–type function to yield an interaction potential that explains most of the properties of this system within the experimental errors and represents an improvement on previously published He–Xe potentials. Helium diffraction measurements are then carried out from the Xe overlayer and the dependence of the specular intensity from the angle of incidence is carefully determined. Further, a He–surface potential is constructed by adding together the following terms: (1) the He–Xe pairwise sum, (2) the long-range He–(0001)C interaction, (3) the three-body contribution generated by the Axilrod–Teller–Muto term, (4) the so-called surface-mediated three-body interaction He–Xe–(0001)C first considered by A. D. McLachlan [Mol. Phys. 7, 381 (1964)], and finally (5) a small correction which is meant to take into account the nonstationary nature of the surface. Using this potential, well-converged close-coupling scattering calculations are carried out, and their results compared with the data. In general, good agreement is obtained. The agreement can, however, be improved by (a) an increase of about 30% in the contribution of three-body forces, (b) the lowering of the He–graphite long-range attraction coefficient by about 15%, or (c) a reduction of the two-body interaction well depth of 1.6% (the experimental error) together with any combination of the factors under (a) and (b) reduced by an adequate amount. Elimination of the contribution of the graphite surface by studying Xe multilayers is hindered by the uncertainties in the "thermal correction'' [point (5) above] which, due to the multilayer increased "softness,'' becomes an appreciable source of uncertainty.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 559 (1989), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 1028-1033 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: New static high pressure measurements for room temperature solid argon to 800 kbar are in excellent agreement with one predicted from a theoretical reduction of shock wave data. The results demonstrate the agreement between shock and static techniques even in cases where shock temperatures are extremely high and a large thermal correction is required to reduce the Hugoniot to an isotherm. The results suggest that solid argon may provide a useful static pressure standard up to about 3–4 Mbar.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1875-1877 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report, for the first time, the experimental observation of capacitive modulation of bipolar current in crystalline silicon devices consisting of a lateral p-i-n channel and an insulated polycrystalline silicon gate. Modulation characteristics of devices with different channel lengths are compared.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1335-1337 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report a stepped-gate-oxide structure implemented in the gate-controlled photodetector. The experimental results show that a one-order-of-magnitude enhancement in the response speed can be achieved by the use of such a structure owing to the induced transverse electrical field.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Histopathology 12 (1988), S. 0 
    ISSN: 1365-2559
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: One hundred and two cases of poorly differentiated adenocarcinoma were obtained from 71 surgical and 31 biopsy specimens of the stomach. These tumours produced both intracellular and extracellular mucins, which were demonstrated to be neutral mucins, N-acetyl sialomucins, sulphomucins and O-acetyl sialomucins. The majority of tumours (85.3%) secreted two or more kinds of mucins simultaneously, but only a small proportion (14.7%) produced a single kind of mucin. Ultrastructurally, three types of mucin granules were identified; these differed in shape and density. Tumour cells containing intracellular mucins or mucin granules were designated as mucous cancer cells and further subdivided into small, large and goblet mucous cells; tumour cells having neither mucins nor glandular differentiation were designated as undifferentiated cancer cells. These histochemical distinctions, supported by the electron microscopical observations, may be useful to demonstrate early malignant foci in gastric biopsies.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 30 (1987), S. 3801-3808 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The steady-state flow of a conducting fluid between two coaxial rotating disks in the presence of an axial magnetic field is considered for the following conditions: (1) the gap d between two disks is very small compared with the radial extension of the disks R; (2) the angular velocity of the disks is not too high, so that the thickness of the Eckman layer δ is still larger than the gap d, (d/δ)1/4(very-much-less-than)1; and (3) the magnetic field B is moderate so that the corresponding Hartman number M(very-much-less-than)R2/d2. Under these conditions asymptotic solutions to the problem are obtained in terms of the small parameter Ε=d/R. The results show that to the lowest-order approximation, the electric properties of the disks are not important to the flow field, while the magnitude of the magnetic field plays an important role in the equilibrium flow profile.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 92 (1988), S. 4699-4702 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4220-4225 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present high-precision results on the electronic band structure and properties of YBa2Cu3O7−δ, YB2Cu3O6, GdBa2Cu3O7−δ, and La2−xMxCuO4 as obtained from highly precise state-of-the-art local density calculations. The results obtained demonstrate the close relation of the band structure to the structural arrangements of the constituent atoms and provide an integrated chemical and physical picture of the interactions and their possible relation to superconductivity. The ionic character of the Y is proven by similar detailed highly precise local density calculations for high TC GdBa2Cu3O7, and explains the coexistence of magnetism and superconductivity in the high TC rare-earth superconductors. Surprising features are the low density of states (DOS) at EF, especially for δ≥0.1 which is lower per Cu atom than that in La2−xSrxCuO4—in agreement with experiment and a relatively large magnetic Stoner factor. Strong indications are demonstrated for the inadequacy of a conventional phonon mechanism for obtaining the higher TC. Charge transfer excitations of occupied Cu1−O dpπ antibonding orbitals into their empty Cu1-O dpσ antibonding orbital partners, result in poorly screened "Cu3+-Cu4+'' -like charge fluctuations. These charge transfer excitations (excitons) thus lead to strong polarization effects in these poorly screened (highly ionic) materials and induce attractive interactions among the 2D electrons. Thus, these interactions via exchange of excitons enhance the electron pairing and serve to enhance the TC proposed for the quasi-2D superconductors.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1108-1111 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of a two-dimensional simulation of the amplification of an ambipolar current flow in a four-terminal crystalline silicon device by charge induced into this flow from an insulated gate electrode. We show that although a bipolar current flow in a crystalline device can indeed be modulated by a gate field, the magnitude of this modulation is less than in amorphous silicon double-injection field-effect transistors. Our proposed structure also has an interesting feature in that the gate field redistributes the current flow between its terminals.
    Type of Medium: Electronic Resource
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