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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of growth interruption interface by mobility profiling (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2211-2215 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mobility profiling technique using a field-effect transistor has been successfully applied to characterize the growth interruption interfaces of organometallic vapor-phase epitaxial Si-doped n-GaAs layers. The interface was formed by interrupting the supply of TMGa and SiH4 for certain lengths of time under a pressure of flowing AsH3. The 30-s interruption interface showed a decrease in the carrier concentration and an increase in the mobility, as obtained from the gate capacitance-voltage and transconductance-voltage characteristics. A quantitative analysis led us to a conclusion that the interface in question is not compensated by acceptor impurities or defects, in contrast with an easy conclusion usually deduced only from the carrier concentration profile, but has an effective reduction of Si doping level. A secondary-ion mass spectroscopic (SIMS) depth analysis of Si and C atoms supported the above-mentioned conclusion. The 60-s interruption, however, showed an extremely low drain current, which was caused by overcompensation of Si by C pileup at the interface, as confirmed from the SIMS depth profile. Thus, it was found that electrical compensation of the interface rapidly proceeds during 30–60-s interruption. The mobility profiling, therefore, provides a sensitive and powerful tool for growth interruption analysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349465
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  • 2
    Electronic Resource
    Electronic Resource
    Enhancement of field-induced optical absorption by potential modification of coupled quantum well structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2892-2894 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel structure, in which the potential profile of the coupled quantum well system is slightly inclined, is proposed for lowering the electric field required to transform the coupled system to a set of uncoupled single quantum wells. Numerical calculations of absorption spectra of graded coupled quantum wells under an electric field and room-temperature photocurrent spectra of fabricated p-i-n diode samples confirm the above enhanced effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104713
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  • 3
    Electronic Resource
    Electronic Resource
    Purely gain-coupled distributed feedback semiconductor lasers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1620-1622 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a new distributed feedback (DFB) laser structure in which almost pure gain coupling can be embodied in principle, without sacrificing low threshold operation. An analysis of coupling coefficients has revealed the condition for canceling index-coupling component. Utilizing organometallic vapor phase epitaxy, we have fabricated GaAlAs/GaAs ridge waveguide distributed feedback lasers having this structure. Excellent single longitudinal mode oscillation independent of facet reflection has been obtained along with low threshold current. The single-mode spectrum has exhibited distinctive characters of purely gain-coupled DFB lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103144
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  • 4
    Electronic Resource
    Electronic Resource
    Ultralow chirping short optical pulse (16 ps) generation in gain-coupled distributed feedback semiconductor lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 37-39 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe optical short pulse generation in novel gain-coupled distributed feedback (GC-DFB) semiconductor lasers by using a simple electrically pumped gain switching method. An optical pulse as short as 16 ps has been obtained from a 130 ps current pulse. The most exciting result is that the lasers keep single longitudinal mode oscillation with very low wavelength chirping (∼0.12 nm) during the gain switching operation. From the optical pulse width and the amount of the wavelength chirping, we have estimated the α parameter of the GC-DFB laser to be less than 1.6.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105570
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  • 5
    Electronic Resource
    Electronic Resource
    Polarization-independent large field-induced refractive index change in a strained five-step GaAs–InAlGaAs asymmetric coupled quantum well (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2674-2676 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A tensile-strained five-step asymmetric coupled quantum well (FACQW) structure is proposed for large field-induced refractive index change without polarization dependence and redshift of the absorption edge. A strong exciton absorption peak is caused by electron-hole transitions between symmetric wave functions and antisymmetric wave functions with a small applied electric field. The field-induced refractive index change of strained the FACQW is larger by one order of magnitude compared to that of a rectangular quantum well and the difference in the refractive index change of TE and TM modes is under 2% when the operation wavelength is not at the absorption edge. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120175
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  • 6
    Electronic Resource
    Electronic Resource
    Epstein-Barr Virus-induced Lymphoblastoid Cell Lines from Patients with Primary Immunodeficiency Diseases (1980)
    Oxford, UK : Blackwell Publishing Ltd
    Scandinavian journal of immunology 11 (1980), S. 0 
    Details
    ISSN: 1365-3083
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Peripheral lymphocytes from eight patients with congenital immunodeficiency diseases were infected with Epstein-Barr virus (EBV) in an attempt to establish B lymphoblastoid cell lines (LCL). These patients included three boys with congenital agammaglobulinaemia, two girls with hypogammaglobulinaemia, one boy with common variable immunodeficiency, one boy with severe combined immunodeficiency with adenosine deaminase deficiency, and one boy with DiGeorge syndrome. Five of the patients bore no surface immunoglobulins (slg) on their peripheral lymphocytes. LCL were established from seven of the eight patients. All the LCL established formed rosettes with EAC3 and had the ability to produce cytoplasmic immunoglobulins (clg) of various classes. Culture supernatants concentrated up to 100-fold developed precipitin bands by Ouchterlony's method with antisera to human Ig in all the established LCL. These results suggested that both slg-, clg- and C3+ cells and slg+, clg- and C3+ cells might be the target cells for EBV and that slg-, clg- and C3+ cells might be the precursor cells of B lymphocytes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3083.1980.tb00221.x
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  • 7
    Electronic Resource
    Electronic Resource
    Theory of electric field-induced optical second harmonic generation in semiconductors (1980)
    Springer
    Optical and quantum electronics 12 (1980), S. 199-205 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The nonlinear optical coefficientd ij(kl) (2ω, 0,ω, ω) for electric field-induced optical second harmonic generation in semiconductors is calculated by means of a perturbation treatment. The result is given directly as a Brillouin zone integral over a resonant energy denominator. A simplified energy band structure model is used to carry out the Brillouin zone integral. The analytic closed-form expression ford ij(kl) (2ω, 0,ω, ω) thus obtained permits the calculation of the absolute value of its spectrum from available energy band parameters. The dispersion ofd 11(11) (2ω, 0,ω, ω) of Ge is numerically calculated, second harmonic photon energies being close to theE 0 andE 1 gaps. The results show pronounced resonant behaviours.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620037
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature compensated coupled cavity diode lasers (1984)
    Springer
    Optical and quantum electronics 16 (1984), S. 463-469 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract It has been shown theoretically that the temperature coefficient of the oscillation wavelength in semiconductor lasers can be reduced to zero by coupling an external cavity whose optical length decreases with temperature. Here are described two types of temperature compensated coupled cavity (TC3) diode lasers and their properties calculated in the steady state. In such devices an interference effect due to multi-cavities is expected to cause unstable mode hopping behaviour, but it was found to be settled by choosing an adequate external cavity length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619639
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  • 9
    Electronic Resource
    Electronic Resource
    πNN Dynamics in pp → pp, pp →πd and πd →πd Processes Below 1 GeV (1995)
    Springer
    Few body systems 18 (1995), S. 133-146 
    Details
    ISSN: 1432-5411
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. pp and πd scattering and pp →πd reaction processes at incident proton laboratory energies T L ≤ 1 GeV are studied in the framework of πNN dynamics. For this purpose three-body calculations are performed with the πN interaction in the P 11, P 33, S 11 and S 31 states and NN forces in the 3 S 1 -3 D 1, 1 S 0, and 3 P 2 states. In addition, the backward-going pion contribution at the πNΔ vertex, the πN-ρN coupling, the heavy-meson exchanges in the NN → NN driving term, and the effect of the off-shell structure in the πN-ρN P 33 interaction are taken into account.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s006010050007
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  • 10
    Electronic Resource
    Electronic Resource
    Aged-onset Kienböck's disease (1990)
    Springer
    Archives of orthopaedic and trauma surgery 109 (1990), S. 241-246 
    Details
    ISSN: 1434-3916
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Kienböck's disease with onset after 50 years of age was studied. Of 127 patients with Kineböck's disease seen over the past 30 years, the cases of 15 (12 female, 3 male) were analyzed. The average age of onset was 58.3 years. Five specimens were obtained operatively in which necrosis of the lunate bone mixed with empty lacunae was identified, as was bony remodelling. Ulnar variance in the aged diseased group (group A) was smaller than that of the aged control group (group C). Moreover, it was noteworthy that the variance among aged controls (group C) was higher than among the young controls (group D). The metacarpal index of the patients with aged-onset Kienböck's disease was markedly lower than that of the young. Considering the increase of ulnar variance with age, the persistence of minus variance and the presence of osteoporosis might make the lunate bone susceptible to injury.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00419936
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