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  • 1980-1984  (2)
  • Chemical Engineering  (2)
  • Polymer and Materials Science
  • 1
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 23 (1983), S. 1047-1049 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: PCS(poly-4-chlorostyrene) has previously been evaluated as a negative e-beam resist, but although the sensitivity was good [2 to 5μC/square centimeter (cm2)], the contrast (γ) was poor (1.1 to 1.5). Recent experiments have shown that contrast is not only a function of molecular weight distribution (MWD), but can also be affected by polymerization conditios. Among these are: branching, head to head linkages, and oxygen in backbone. PCS was prepared via thermal free radical solution polymerization, and then fractionated by differential solvation techniques. Reactions occurring during polymerization and crosslink formation on irradiation will be discussed. For molecular weights of 700 and 300K respectively (same MWD), the sensitivity was 2 and 5μC/cm2, while the contrast (γ) was 3.5 for both. This is the highest reported contrast for a polymeric negative resist. The resist can then be UV hardened after development, and will not flow at 200°C. The RIE etch rate is ∼1/2 that of PMMA in various plasmas.
    Zusätzliches Material: 5 Ill.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 23 (1983), S. 1054-1058 
    ISSN: 0032-3888
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Physik
    Notizen: Linear polymers of silicone gums (polysiloxanes) have many attributes that make them attractive for lithographic applications, such as oxidative and thermal stability, good adhesion properties, solubility in common solvents, and resistance to etching in an oxygen plasma. When polysiloxanes are used as the top imaging layer (∼2000Å) in a two-layer resist system, the developed negative siloxane images act as a high resolution etch mask for the oxygen plasma etching of the bottom planarizing polymer layer. Commercially available polysiloxanes have been evaluated for their deep UV sensitivity at 2537Å, and have been found to have very high resolution capabilities (∼0.5μ) and high contrast (γ = 4). The negative images do not swell in the developer, and the line width is therefore independent of development time. The combination of high resolution, sensitivity, and ease of processing make this a simple multilayer system for deep UV and e-beam applications.
    Zusätzliches Material: 11 Ill.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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