ISSN:
1432-0630
Keywords:
61.70 Tm
;
66.30 J
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The influence of surface orientation in Bi implanted silicon, annealed by Q-switched ruby laser pulse irradiation was investigated. Depth distributions and lattice location of the Bi atoms were obtained using4He backscattering and channeling techniques and the electrical behavior studied by sheet resistance measurements. The dopant profiles show partial surface accumulation and in-depth broadening without influence of the substrate orientation. These profiles can be fitted by a numerical calculation based on the normal freezing model with an interfacial segregation coefficient much higher than the equilibrium one. The impurity atoms located in the in-depth profile are shown to be electrically active when their maximum concentration does not exceed 1020 atoms/cm3.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00935392
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