ISSN:
1432-0630
Keywords:
61.70
;
64
;
81
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The effect of lattice defects on positron annihilation in semiconductors was studied. In silicon, any detectable doping effect could not be found. In germanium, the thermal equilibrium measurements of annihilation lineshapes showed no vacancy effect. From these experimental facts, the interaction of positrons with lattice defects was discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00935907
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