ISSN:
1432-0630
Schlagwort(e):
61.70
;
64
;
81
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract The effect of lattice defects on positron annihilation in semiconductors was studied. In silicon, any detectable doping effect could not be found. In germanium, the thermal equilibrium measurements of annihilation lineshapes showed no vacancy effect. From these experimental facts, the interaction of positrons with lattice defects was discussed.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00935907