Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Site transfer of Si in GaAs after heavy ion MeV implantation and annealing (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2692-2699 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of n-type and p-type epitaxial GaAs layers have been studied after MeV implantation of heavy (Xe and Er) ions. All implanted layers were highly resistive immediately after implantation. Annealing to only moderate temperature (725 °C) recovered the as-grown electrical properties of beryllium-doped p-type layers. However, after annealing silicon-doped n-type layers, we observe a dramatic change from the as-grown carrier profiles. After anneal, the silicon-doped, n-type layers became conductive but the carrier profiles were markedly different from the as-grown material. A significant thickness of the implanted portion of the epitaxial layers shows distinct p-type conductivity after annealing. We have correlated this p-type activity with a transfer of silicon from the gallium sublattice (SiGa) to the arsenic sublattice (SiAs). The site transfer is viewed to result from the altered thermodynamics governing site occupancy during annealing of Si in GaAs under the unique damage conditions produced by heavy ion MeV implantation. Additionally, the observed thermal stability of the site transfer process above 875 °C may have implications for implantation isolation techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351518
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Ion implantation into (x11)A-oriented InP and GaAs (x≤4) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7774-7778 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si, Ge, and Be implantations were performed into (x11)A-oriented semi-insulating InP and GaAs substrates for x≤4. For comparison some of the implantations were also performed into (110)- and (100)-oriented substrates. For 200 keV/5×1013 cm−2 Si and 200 keV/3×1013 cm−2 Ge implants after 850 °C/7 s annealing, the InP is always n type with similar sheet resistance independent of the substrate orientation. No in-diffusion of Si or Ge was observed after annealing for any substrate orientation. Similar behavior was observed for Si implants in GaAs and for Si/B co-implants in both InP and GaAs. Photoluminescence measurements were performed on the Si- and Si/B-implanted InP and GaAs. For 30 keV/1.5×1014 cm−2 Be implants in both InP and GaAs, the in-diffusion of Be in (311)A-oriented substrates is less compared to the (100) material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356612
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence and magnetic resonance studies of Er3+ in MeV ion-implanted GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 502-504 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of post-implantation annealing have been studied in MeV Er-implanted GaAs by monitoring the Er3+ electron paramagnetic resonance (EPR) signal as well as the Er3+ and near-band-edge photoluminescence (PL) spectra as a function of the anneal temperature. Er3+ PL is observed from several distinct Er sites in the annealed material. In addition, the observed dependences upon anneal temperature suggest that the Er3+ PL is emitted from centers that are not in the Er3+ state at equilibrium. Absolute EPR measurements of the Er3+ concentration indicate that only a small fraction (〈0.1%) of the Er in the sample is Er3+.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104621
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Evidence of donor–acceptor pair recombination from a new emission band in semiconducting diamond (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2136-2138 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Steady state and time resolved photoluminescence studies of type IIb boron-doped synthetic diamond reveal a new broad red emission band that exhibits many of the features of classic donor–acceptor pair recombination. This recombination is thought to be between an as-yet unidentified neutral donor, possibly nitrogen related, approximately 3.6 eV below the conduction band edge and neutral boron acceptors at 0.37 eV above the valence band edge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111710
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    .delta. Opioid antagonist activity and binding studies of regioisomeric isothiocyanate derivatives of naltrindole: evidence for .delta. receptor subtypes (1992)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 35 (1992), S. 4086-4091 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00100a014
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    facet.materialart.
    Unknown
    Der Apokalypse-Zyklus der Roda-Bibel und seine Stellung in der ikonographischen Tradition (1972)
    Madrid : Periodicals Archive Online (PAO)
    Archivo español de arqueología. 45/47:125/130 (1972/1974) 267 
    Details
    ISSN: 0066-6742
    Topics: Archaeology
    Notes: ICONOGRAFIA
    URL: http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&res_dat=xri:pao:&rft_dat=xri:pao:article:5376-1972-045-25-000019
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Short report: cefprozil for the eradication of Helicobacter pylori infection (1992)
    Oxford, UK : Blackwell Publishing Ltd
    Alimentary pharmacology & therapeutics 6 (1992), S. 0 
    Details
    ISSN: 1365-2036
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Helicobacter pylori infection has proven to be extraordinarily difficult to eradicate. Antimicrobial monotherapies have been particularly disappointing, with most eradication rates in the range of 0 to 15%. We evaluated cefprozil (250 mg q.d.s. for 14 days) in 12 H. pylori-infected subjects. The 13C-urea breath test was used to evaluate effectiveness of therapy. Eradication was defined as a negative urea breath test 4 to 6 weeks after the end of treatment. Suppression of H. pylori was demonstrated in 4 of 12 (33%) by a negative urea breath test two days after start of treatment. H. pylori infection was not eradicated in any subject (0%). Adverse events were intermittent and mild. Cefprozil does not appear to offer promise as monotherapy for the eradication of H. pylori.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2036.1992.tb00564.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Short report: a non-metronidazole triple therapy for eradication of Helicobacter pylori infection–tetracycline, amoxicillin, bismuth (1993)
    Oxford, UK : Blackwell Publishing Ltd
    Alimentary pharmacology & therapeutics 7 (1993), S. 0 
    Details
    ISSN: 1365-2036
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Triple therapies using bismuth, metronidazole and tetracycline or amoxicillin were the first truly successful anti-H. pylori therapies. Metronidazole resistance has become an increasing problem that has severely limited the usefulness of the original triple therapy. Resistance to tetracycline or amoxicillin has not been reported and both are effective against H. pylori. We therefore tested a new triple therapy consisting of 500 mg tetracycline, 500 mg amoxicillin, and 2 tablets of bismuth subsalicylate each administered four times daily (with meals and at bedtime) for 14 days during treatment with ranitidine 300 mg daily. H. pylori eradication was defined as no evidence of H. pylori one or more months after stopping therapy. H. pylori status was evaluated by a combination of urea breath test and histology. Sixteen patients with H. pylori infection and active peptic ulcers were enrolled. The new triple therapy was successful in only 7 individuals (43%). Metronidazole appears to be critical for the effectiveness of the original triple therapy. An alternative to metronidazole will be required for a new successful triple therapy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2036.1993.tb00076.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    232. Die Hautziichtung als Vorbereitung großer infizierter Wundflächen auf freie und gestielte Lappenplastiken (1974)
    Springer
    Langenbeck's archives of surgery 337 (1974), S. 868-869 
    Details
    ISSN: 1435-2451
    Keywords: Skin Cultivation ; Plastic Surgery ; Hautzüchtung ; Lappenplastiken
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Zusammenfassung Die Hautzüchtung bietet rich zur Planung and Durchführung einer sicheren and endgültigen Lappenplastik an. Während der Zeit, die sonst zur Vorbereitung einer temporären Spalthautplastik angewendet werden muß, führt dieses Verfahren durch voll ständigen Wundschluß zur absolut transplantationsbereiten Empfängerfläche. Gleichzeitig kann z. B. ein gestielter Lappen geplant and vorbereitet werden. Durch die schnelle provisorische Überhäutung wird die Zeit his zur Durchführung einer endgültigen Lappenplastik hiermit wesentlich verkürzt bei gleichzeitiger Steigerung des Sicherheitsfaktors.
    Notes: Summary A skin culture which can be used on any infected wound with bad circulation after only a few days of preparation is suitable for the planning and execution of safe final plastic surgery. During the time which would otherwise have to be spent in preparation of a temporary split-skin graft, this process, due to its complete closure of the wound, makes an area absolutely ready to receive transplantation. Thus, for example, a pediculated flap can be planned and prepared at the same time. The rapid provisional covering with skin allows final plastic surgery to be executed much sooner, thereby raising the safety factor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01278864
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Allelism of SNQ1 and ATR1, genes of the yeast Saccharomyces cerevisiae required for controlling sensitivity to 4-nitroquinoline-N-oxide an aminotriazole (1990)
    Springer
    Current genetics 18 (1990), S. 93-96 
    Details
    ISSN: 1432-0983
    Keywords: Mutagen resistance ; DNA sequencing ; Transmembrane protein ; Gene disruption
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary SNQ1 gene function is required for the expression of resistance to 4NQO in wild-type yeast. The sequence of a 3.7 kb yeast DNA containing the gene SNQ1 was determined. The SNQ1 gene consists of an open reading frame of 1641 bp and encodes, according to the hydrophobicity analysis of the putative protein, a transmembrane protein of 547 amino acids. Homology searches in yeast genome databanks revealed a 100% sequence homology with gene ATR1 which controls resistance to aminotriazole in S. cerevisiae. Pre-treatment of wild-type yeast, but not of snq1-0::LEU2 disruption mutants, with sublethal doses of aminotriazole induced hyper-resistance to 4-nitroquinoline-N-oxide. Partial deletion of the nucleotide sequence coding for a putative ATP-binding site has no, or little, influence on resistance to 4NQO whereas total deletion of the region coding for this ATP-binding domain leads to 4NQO-sensitive nullmutants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00321122
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...