ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Deformation of single crystals of gallium arsenide is reported in bend and tension up to 1000° C whilst maintaining stoichiometry in an arsenic atmosphere. Surface defects and impurity segregation are shown to be dislocation sources. The dislocation density is low enough, however, to show large yield drops which are analysed in detail. Strains of 39% are possible. The activation energy for dislocation movement is increased by heat-treatment owing to an increase in point defect population. Electron microscopy shows that the predominant slip systems are {111} 〈110〉 and the majority of dislocations have b=a/2 〈110〉, the axes lying along 〈110〉 and 〈112〉 directions. Sub-cell formation occurs with sub-boundaries lying along 〈110〉 directions.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00549336
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