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  • 2000-2004  (14)
  • 1995-1999  (45)
  • 1965-1969  (8)
  • 1
    Digitale Medien
    Digitale Medien
    Defect recognition via longitudinal mode analysis of high power fundamental mode and broad area edge emitting laser diodes (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 43-47 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A nondestructive method is presented which allows a precise detection of defects and their positions inside the cavity of semiconductor lasers. The defect recognition is based on the measurement of the longitudinal mode spectrum below threshold and the inspection of its Fourier transformation. Using a theoretical model, it is shown that a small distortion inside the cavity leads to a peak in the Fourier transformed spectrum from which the position of the distortion relative to the facets can be determined. For a ridge waveguide laser we find a direct correlation between defects identified by the analysis of the longitudinal mode spectrum and cathodoluminescence imaging. The applicability of this method for nondestructive defect recognition will also be demonstrated for broad area laser diodes with lateral multimode emission. The investigations reveal that the presented method can be used to assess the crystal quality of manufactured laser diodes. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1347408
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  • 2
    Digitale Medien
    Digitale Medien
    Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3817-3821 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial growth of the strongly lattice mismatched (6.5%) layered chalcogenides InSe and GaSe on each other is obtained with the concept of van der Waals epitaxy as proven by low-energy electron diffraction and scanning tunnel microscope. InSe/GaSe/InSe and GaSe/InSe/GaSe quantum well structures were prepared by molecular beam epitaxy and their interface properties were characterized by soft x-ray photoelectron spectroscopy. Valence and conduction band offsets are determined to be 0.1 and 0.9 eV, respectively, and do not depend on deposition sequence (commutativity). As determined from the measured work functions the interface dipole is 0.05 eV; the band lineup between the two materials is correctly predicted by the Anderson model (electron affinity rule). © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363335
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  • 3
    Digitale Medien
    Digitale Medien
    Partial density of states in the CuInSe2 valence bands (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7806-7809 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The valence band spectra of a vacuum cleaved CuInSe2 (011) surface were measured with synchrotron radiation at photon energies between 16 and 95 eV. The strong dependence of the photoionization cross section of atomic levels between 28 and 60 eV is used to divide the valence band emissions into contributions from Se 4p and Cu 3d states in order to map the respective partial density of states. The derived partial density of Cu 3d states to the total valence band density of states is around 50% in the upper part of the valence band and about 75% at its maximum corresponding to non-bonding Cu d states. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.365390
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  • 4
    Digitale Medien
    Digitale Medien
    Transmission electron microscopy study of rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3910-3914 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Phase formation in rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As has been investigated by means of cross-sectional transmission electron microscopy, convergent-beam electron diffraction, and energy-dispersive x-ray analysis. Solid-phase regrowth is observed to occur similarly as in Pd/Ge contacts on GaAs or InP. The reaction starts at low temperatures with the formation of an amorphous Pd–In–Ga–As layer, which crystallizes at elevated temperatures yielding hexagonal Pd4In0.53Ga0.47As being first described in this work. At temperatures (approximately-greater-than)250 °C, this phase decomposes due to epitaxial solid-phase regrowth of In0.53Ga0.47As and formation of Pd–Ge phases. The stable composition is reached at temperatures (approximately-greater-than)350 °C with excess Ge diffused through top Pd–Ge to the contact interface and growing epitaxially on the semiconductor. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363348
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  • 5
    Digitale Medien
    Digitale Medien
    Chemical interaction of Na with cleaved (011) surfaces of CuInSe2 (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5039-5043 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: To study the beneficial effect of sodium-containing substrate material on the photovoltaic properties of thin-film CuInSe2 solar cells the chemical interaction of Na with CuInSe2 has been investigated by synchrotron excited photoelectron spectroscopy. A clean CuInSe2 (011) surface was prepared by cleaving an oriented single crystal in UHV. The cleaved surface exhibits an electron affinity of χ≈4.6 eV. The Se 3d level shows a surface core level shift of −0.4 eV. Na was sequentially deposited in UHV in small steps from a commercial dispenser source. Initially ionized Na adsorbs on the surface leading to a shift of the surface Fermi level by 0.3 eV closer to the conduction band. Removal of Cu from the surface is observed. For higher Na deposition a chemical reaction of Na with the CuInSe2 surface occurs leading to the formation of metallic indium and Na2Se. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363549
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  • 6
    Digitale Medien
    Digitale Medien
    Highly oriented layers of the three-dimensional semiconductor CdTe on the two-dimensional layered semiconductors MoTe2 and WSe2 (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5718-5722 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The II–VI semiconductor CdTe was sequentially deposited onto the (0001) van der Waals surfaces of the layered compound semiconductors MoTe2 and WSe2 by molecular beam epitaxy. Growth could only be achieved after deposition of a nucleation layer of CdTe at room temperature. After nucleation subsequent deposition steps followed at increased substrate temperatures (T=170–370 °C) in order to increase the crystalline quality of the films. The deposited films were investigated after each growth step by low energy electron diffraction and photoelectron spectroscopy. The diffraction pattern indicates a facetting of the (111) oriented film surfaces. From photoemission data we exclude interface reactions between substrate and film material. Transmission electron microscopy was used to examine the film morphology after the UHV experiments. The mean diameter of the film crystallites is 200–400 A(ring). © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363624
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  • 7
    Digitale Medien
    Digitale Medien
    Point-group symmetrized boson representation. Algebraic solution for symmetry-adapted bases of Oh (1996)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 37 (1996), S. 2400-2425 
    Details
    ISSN: 1089-7658
    Quelle: AIP Digital Archive
    Thema: Mathematik , Physik
    Notizen: A point group symmetrized boson representation (SBR) is introduced that is particularly convenient for describing molecular vibrations. In this paper the SBR is elucidated using the example of the molecule SF6 with Oh symmetry. The advantages of the SBR are that its basis vectors have a clear physical picture, their number is very small (equal to one-eighth of the dimension of the reducible representation for Oh), and the irreducible bases for any concrete cases can be obtained trivially from those for the general case without any projection. All the irreducible bases for the group chains Oh&supuline;D4&supuline;C4 or Oh&supuline;D4&supuline;D2 are tabulated once and for all. As an application, the Hamiltonian in the algebraic model of Iachello and Oss for stretching vibrations of the molecule SF6 is diagonalized in the symmetry adapted bases. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.531518
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  • 8
    Digitale Medien
    Digitale Medien
    Au–Sn solder bumps with tungsten silicide based barrier metallization schemes (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2367-2369 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A homogeneous melting eutectic Au/Sn solder bump for flip-chip application has been developed. The underbump metallization consists of a WSi0.4N0.2-layer and a Ni-wetting layer. The solder is deposited as a sequence of alternating Au and Sn layers. The bump can be exposed to multiple fluxless reflow cycles. The reflow of the solder as deposited starts with a phase forming process in the solid state which results in an eutecticlike phase and the near eutectic δ and ζ phases. The δ and ζ phases dissolve during the liquid state stage of the reflow at temperatures between 300 and 350 °C. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114347
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  • 9
    Digitale Medien
    Digitale Medien
    Fermi-level-dependent defect formation in Cu-chalcopyrite semiconductors (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2283-2285 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Valence-band photoelectron spectroscopy of CuInSe2, CuInS2, and CuGaSe2 surfaces and interfaces give evidence for the formation of Cu vacancies when the Fermi level moves upwards in the band gap due to contact formation. The effect might be a key issue in understanding basic properties of solar cell devices based on these materials. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123825
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  • 10
    Digitale Medien
    Digitale Medien
    Band lineup between CdS and ultra high vacuum-cleaved CuInS2 single crystals (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1299-1301 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The interface formation between vacuum evaporated CdS and ultrahigh vacuum-cleaved CuInS2 single crystals has been studied by synchrotron excited photoelectron spectroscopy. The valence band discontinuity is determined directly from valence band difference spectra to be ΔEV=0.6 (±0.1) eV. This value is significantly smaller than for other preparation conditions given in the literature and evidently not suitable for solar cell applications. The similarity to observations at the CdS/CuInSe2 interfaces suggests that neutrality levels play a dominant role in establishing the band lineup at interfaces containing chalcopyrite semiconductors. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.118517
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