Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Lateral dopant profiling with 200 nm resolution by scanning capacitance microscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1662-1664 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurement of dopant density in silicon with lateral resolution on the 200 nm scale has been demonstrated with a near-field capacitance technique. The technique is based upon the measurement of local capacitance between a 100 nm tip and a semiconducting surface. Lateral dopant imaging is achieved by the measurement of the voltage-dependent capacitance between tip and sample due to the depletion of carriers in the semiconductor, as the tip is scanned laterally over the surface. Measurements of dopant density have been demonstrated over a dopant range of 1015–1020 cm−3. Capacitance-voltage measurements have been made on a submicrometer scale.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102312
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Measurement of in-plane magnetization by force microscopy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1446-1448 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present data which show that the magnetic force microscope is capable of detecting the component of the magnetic field parallel to the surface of a sample under study. Images of bits in a Co-alloy thin-film disk and of laser-written bits in a TbFe film were taken with a magnetized tip tilted at 45° with respect to the surface normal. In both cases the asymmetric part of the image of a domain is interpreted in terms of gradients in the in-plane component of the magnetic field. The bits written in the Co-alloy disk were decorated with small magnetized particles, allowing identification of the domain boundaries and the asymmetric component of the force microscope image due to in-plane magnetization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99964
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Scanning capacitance microscopy on a 25 nm scale (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 203-205 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A near-field capacitance microscope has been demonstrated on a 25 nm scale. A resonant circuit provides the means for sensing the capacitance variations between a sub-100-nm tip and surface with a sensitivity of 1×10−19 F in a 1 kHz bandwidth. Feedback control is used to scan the tip at constant gap across a sample, providing a means of noncontact surface profiling. Images of conducting and nonconducting structures are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102096
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Noise reduction technique for scanning tunneling microscopy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1503-1505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Noise stemming from mechanical vibration, electronic noise, or low frequency (1/f power spectrum) inherent in the tunneling process, often limits the resolution, speed, or range of application of scanning tunneling microscopy (STM). We demonstrate a technique for minimizing the effect of these noise sources on the STM image. In our method, the tunneling tip is vibrated parallel to the sample surface at a frequency f0, above that of the feedback response frequency. Two signals are obtained simultaneously: the conventional topography, and a differential image corresponding to the amplitude of current modulation at f0. The resultant ac signal can be simply related to the normal STM topographic image, with significant improvement in the signal-to-noise ratio.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99940
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Chemically homogeneous fine-grained Mn-Zn ferrites by spray drying (abstract) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5665-5665 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemically and structurally uniform Mn-Zn ferrites have been produced using powders synthesized by the spray decomposition of mixed, aqueous Mn, Fe, and Zn nitrate solutions. The particle size of the as-formed powder depended strongly on the metal ion concentration in solution; higher concentrations produced larger sizes. The as-formed particles are spherical, internally hollow, and consisted mostly of Fe2O3. A 900 °C, 6-h argon treatment removed the internal void space and converted the particles mostly to the ferrite spinel phase. Sintering of compacts from heat-treated powders produced microstructures superior to those from as-formed powders. Uniform, fine-grained materials, with a densification level comparable to that of commercial sintered ferrite, have been produced at the very low sintering temperature of 1100 °C. Preliminary work indicates that a higher initial permeability is obtained when a higher sintering temperature was used and the level of its disaccommodation depended on the oxygen partial pressure present during sintering. Both "accommodation'' and disaccommodation were observed in the permeability; their magnitudes depended on the peak value of the applied excitation field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342264
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Generation and annealing of defects in silicon dioxide (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 868-874 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation and annealing of fixed positive and fixed negative charges are discussed in the context of neutral hole and neutral electron traps. The analyses are based on the results of experimental studies involving hydrogen ambient atmosphere annealing and/or electron injection of gate insulators in insulated gate field-effect transistors which have been damaged by 1.5-keV x rays. It is found, for example, that annihilation of fixed positive charge either by hydrogen annealing, or by electron injection results in indistinguishable "repair'' of this defect, indicating that such repair probably involves loss of an electron by the hydrogen to an E'γ center. It is postulated that a new electron spin resonance (ESR) center representing fixed negative charge, Nn, which is derived from a large cross-section neutral electron trap might be detected under the proper conditions. Since large cross-section neutral traps (10−15 cm2) are known to exist in significant concentrations in insulators damaged with ionizing radiation, but have not been correlated to any structural defect detected using ESR, it would appear that they are not paramagnetic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339691
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    High-field torque magnetometry measurements on Y1.8Er0.2Fe14B (abstract) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3778-3778 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Y1.8Er0.2Fe14B is an interesting system in that the tendency of the Er ions to order in the basal plane is almost exactly canceled at low temperatures by the uniaxial anisotropy of the iron sublattice.1 We have performed torque magnetometry measurements in all three principal planes of a single crystal of this material at temperatures from 4 to 300 K in magnetic fields up to 60 kG, which is adequate to produce near saturation even in directions away from the principal axes, thus allowing us to determine the magnetocrystalline anisotropy free energy as a function of orientation and temperature. The free energy data were compared with calculations using the full set of crystal field parameters allowed by symmetry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338640
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Chemically homogeneous fine-grained Mn-Zn ferrites by spray drying (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2014-2016 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemically and structurally uniform Mn-Zn ferrites have been produced using powders synthesized by the spray decomposition of mixed, aqueous Mn, Fe, and Zn nitrate solutions. The particle size of the as-formed powder depended strongly on the metal ion concentration in solution; higher concentrations produced larger sizes. The as-formed particles are spherical, internally hollow, and consisted mostly of Fe2O3. A 900 °C, 6-h argon treatment removed the internal void space and converted the particles mostly to the ferrite spinel phase. Sintering of compacts from heat-treated powders produced microstructures superior to those from as-formed powders. Uniform, fine-grained materials, with a densification level comparable to that of commercial sintered ferrite, have been produced at the very low sintering temperature of 1100 °C. Preliminary work indicates that a higher initial permeability is obtained when a higher sintering temperature was used and the level of its disaccommodation depended on the oxygen partial pressure present during sintering. Both "accommodation'' and disaccommodation were observed in the permeability; their magnitudes depended on the peak value of the applied excitation field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342893
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Defect generation in silicon dioxide from soft x-ray synchrotron radiation (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1145-1151 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Generation of fixed positive charge, neutral electron traps, and fixed negative charge in SiO2 due to exposure to monochromatic x-ray radiation in the photon energy range from 300 to 1000 eV in a synchrotron source is reported upon. At a constant exposure level of 2×107 rads, the number of defects generated is approximately independent of x-ray photon energy. The generated defects, independent of x-ray radiation energy, show normal post-metal annealing characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341876
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Atomic force microscope–force mapping and profiling on a sub 100-A(ring) scale (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4723-4729 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modified version of the atomic force microscope is introduced that enables a precise measurement of the force between a tip and a sample over a tip-sample distance range of 30–150 A(ring). As an application, the force signal is used to maintain the tip-sample spacing constant, so that profiling can be achieved with a spatial resolution of 50 A(ring). A second scheme allows the simultaneous measurement of force and surface profile; this scheme has been used to obtain material-dependent information from surfaces of electronic materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338807
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...