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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of high-purity InP by photoluminescence (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7165-7168 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InP polycrystals grown by the HB technique and InP single crystals grown by the liquid-encapsulated Czochralski technique have been evaluated by photoluminescence. It was found that as the carrier concentration is decreased, the photoluminescence spectrum shows finer structures. When the carrier concentration is less than 9×1014 cm−3, a strong free-exciton peak could be observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344547
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  • 2
    Electronic Resource
    Electronic Resource
    Development of high power negative-ion sources for fusion research at JAERI : Proceedings of the 5th international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1159-1161 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Recent progress regarding high power negative-ion source development for fusion research at JAERI is described. Using the cesium-seeded volume production-type negative-ion sources with an electrostatic acceleration system, a stable production of multiampere negative hydrogen/deuterium ion beams and a high energy acceleration of negative hydrogen ions of 0.2 A up to 350 keV have been demonstrated. On the basis of this recent progress, the construction of a 500 keV, 22 A, deuterium negative-ion source for a neutral beam injection system for the JT-60 tokamak was initiated. Additionally, a 1 MeV, 1 A Cockcroft–Walton-type test facility has been prepared in order to demonstrate high current negative ion acceleration up to 1 MeV. Through these research and development activities, the high power negative-ion source technology sufficient for the realization of a neutral beam injection system for a fusion experimental reactor such as the International Thermonuclear Experimental Reactor, is in the planning stages.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145044
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical characteristics of Zn in heavily doped InP grown by the liquid-encapsulated Czochralski technique (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 659-663 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical activity of Zn in heavily doped InP crystals grown by the liquid-encapsulated Czochralski technique has been studied through annealing experiments. When the wafers were annealed at 650 °C, the saturated hole concentration increased as the cooling rate after the heat treatment increased. Annealing at 400 °C led to a reduction in the saturated hole concentration, which was not dependent on the cooling rate after the heat treatment. Some defect reactions at 400 °C would account for this phenomenon. The experimental results of the saturation of the hole concentration may be explained in terms of a defect state whose nature depends on the Fermi level position, as has been suggested by Walukiewicz [Appl. Phys. Lett. 54, 2094 (1989)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351351
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  • 4
    Electronic Resource
    Electronic Resource
    Low-temperature epitaxial growth of cerium dioxide layers on (111) silicon substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8313-8315 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the epitaxial growth of cerium dioxide (CeO2) layers on (111) silicon substrates was studied using ultra-high-vacuum evaporation, varying the substrate temperature in the range between 150 and 900 °C. Characterization using Rutherford backscattering spectrometry and reflection high-energy electron diffraction proved that a CeO2 layer on (111) silicon has considerably good crystalline quality in the range between 200 and 850 °C. It is clarified that the epitaxy can be attained even at surprisingly low temperatures (less than 200 °C). A substrate temperature above 850 °C leads to rather poor crystallinity due to an exponential increase of residual gas pressure. Refractive indices of the epitaxial layers were measured by ellipsometry to be in the range of 2.19–2.79.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347442
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  • 5
    Electronic Resource
    Electronic Resource
    Design and experimental results of a new electron gun using a magnetic multipole plasma generator (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 761-771 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new electron gun utilizing a magnetic multipole plasma generator was designed and fabricated as the heat source of the high heat flux test facility, called JEBIS (JAERI electron beam irradiation stand). By changing the acceleration grids, this electron gun is able to produce a pencil to a sheetlike electron beams up to 4 A at 100 keV for 1 ms to continuous mode. In this electron gun, magnetic lens system is not adopted to focus the electron beam, but the space charge neutralization effect by the beam plasma produced downstream of the electron gun is utilized to prevent the blow-up of the electron beam. In addition, high permeability metal is embedded in the first and the second grids to magnetically shield the earth field and the stray field from the beam bending magnet. It was experimentally demonstrated that wide range of heat flux from 0.2 MW/m2 to over 2000 MW/m2 can be realized at the test sample position about 1.7 m downstream of the electron gun.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142081
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  • 6
    Electronic Resource
    Electronic Resource
    Comparison of H− and D− production in a magnetically filtered multicusp source : International conference on ion sources (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 496-498 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A JAERI (Japan Atomic Energy Research Institute)negative ion source was tested at LBL (Lawrence Berkeley Laboratory) as part of the U.S.–Japan Fusion Cooperation Program. By varying the strength of the magnetic filter from 450 to 930 G cm, we compared production, transport, and extraction of the negative ions. The maximum current densities, which were obtained at the corresponding optimum filter strength for each gas species, were 10.4 mA/cm2 for H− and 8.4 mA/cm2 for D− at arc discharges of 40 kW. The ratio of the ion current densities (JD−/JH−) is about 0.8, which is higher than 1/(2)1/2 . The electron to negative ion ratio was 13 for hydrogen and 38 for deuterium at the corresponding optimum filter strength. The higher ratio in deuterium is probably due to higher space potential of deuterium plasma by a few volts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141232
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  • 7
    Electronic Resource
    Electronic Resource
    A 14 cm×36 cm volume negative ion source producing multi-ampere H− ion beams : International conference on ion sources (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 499-501 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A large volume negative ion source, which has a newly devised magnetic filter called a PG filter, was designed and tested. The PG filter produces a uniform magnetic filter field over a large extraction area of 14×36 cm2 by flowing a high current through the plasma grid itself. By optimizing the filter strength, we succeeded to produce 3.4-A 75-keV negative hydrogen ion beams for 50 ms from 253 apertures of 11.3 mm diam with an average current H− density of 13 mA/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141233
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial growth of CeO2 layers on silicon (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1332-1333 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CeO2 layer was epitaxially grown for the first time on both (111) and (100) silicon substrates by vacuum evaporation. Characterization using Rutherford backscattering and reflection high-energy electron diffraction proved that a CeO2 layer on (111) Si has considerably good crystalline quality, whereas that on (100)Si contains a large amount of crystallographic defects, especially in the vicinity of the CeO2/Si interface. Auger electron spectroscopy analysis showed a uniform concentration distribution of Ce and O throughout the epitaxial layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103202
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  • 9
    Electronic Resource
    Electronic Resource
    Purely gain-coupled distributed feedback semiconductor lasers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1620-1622 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a new distributed feedback (DFB) laser structure in which almost pure gain coupling can be embodied in principle, without sacrificing low threshold operation. An analysis of coupling coefficients has revealed the condition for canceling index-coupling component. Utilizing organometallic vapor phase epitaxy, we have fabricated GaAlAs/GaAs ridge waveguide distributed feedback lasers having this structure. Excellent single longitudinal mode oscillation independent of facet reflection has been obtained along with low threshold current. The single-mode spectrum has exhibited distinctive characters of purely gain-coupled DFB lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103144
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  • 10
    Electronic Resource
    Electronic Resource
    Diamond deposition from CF4-H2 mixed gas by microwave plasma (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 772-773 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have deposited diamond films from CF4-H2 mixed gas by microwave plasma chemical vapor deposition method. The diamond films were characterized by scanning electron microscopy, x-ray diffraction, Raman spectrometry, and secondary ion mass spectrometry. (111) peak line of diamond crystal observed by x-ray diffraction and the peaks at 1333 cm−1 in the Raman spectroscopies of the deposited films showed that the films consisted of diamond. We observed that the quality of diamond films got better as the concentration (from 2.5% to 40%) of CF4 (tetrafluoromethane) got lower. It was observed from the optical emission spectra that CF, CF2, CF3, CH, and C2 fragments existed in the microwave plasma of CF4-H2 mixed gas. But it was observed from secondary ion mass spectroscopies that impurities (Si, F, and H) were present in the diamond films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107794
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