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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6457-6459 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By photoluminescence and by Zeeman spectroscopy we study the characteristic 4f luminescence transition 3H5 → 3H6 at 1.0 eV of thulium in gallium arsenide which has been reported recently. It turns out that optically active Tm3+, which is present in mainly one specific type of center, does not occupy a simple substitutional lattice site. The results show a considerable tetragonal crystal field. The excitation mechanism of the 1.0-eV luminescence is investigated by photoluminescence excitation. The 3H5 → 3H6 is pumped most efficiently by trapping of free excitons.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1726-1734 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline iron disilicide thin films are prepared by furnace annealing of electron-beam deposited iron layers. As substrates we use single-crystal silicon wafers, epitaxial silicon thin films on sapphire substrates, and low-pressure chemical vapor deposited polycrystalline silicon thin films on oxidized silicon wafers. X-ray diffraction indicates that orthorhombic β-FeSi2 is obtained for growth temperatures in the range 800–900 °C. Photothermal deflection spectroscopy reveals a direct band-gap of 0.85 eV. Optical transitions at energies above 1.4 eV are investigated by spectroscopic ellipsometry. Measurements of the subgap defect absorption, photoluminescence, conductivity, and of the Hall mobility suggest that lower growth temperatures yield material of better quality.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1944-1944 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6088-6093 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss defects created by focused Ga ion beam implantation in GaAs or AlGaAs/GaAs heterostructures using deep level transient spectroscopy (DLTS). A novel contact configuration which is sensitive to defects located at the boundary between implanted and unperturbed regions at a well-defined depth is presented. The DLTS spectra for these samples are dominated by a peak with an activation energy of Ea=0.38 eV. The results show that this peak is associated with implantation-induced damage independent of the ion species. The defect is also found in a sample with Schottky contacts on top of a Ga-implanted GaAs layer.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6179-6186 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The excessive damage and high defect density generated during ion-beam etching of crystalline Si is characterized by Rutherford backscattering, photoluminescence, and transmission electron microscopy. In samples etched at room temperature, a highly damaged surface layer (d≈5 nm) with a large concentration of noble gas atoms is detected and analyzed using Rutherford backscattering in axial channeling geometry. Point defects due to the low-energy noble gas ion implantation are produced within a depth of 100 nm and deeper, and are monitored by their characteristic photoluminescence. The intensity of the noble-gas-defect photoluminescence is studied for different ion-beam energies (200–2000 eV) and crystal orientations. A threshold to produce the defects can then be determined, leading to an estimate of the number of vacancies contained in the noble gas defect. Annealing of etched samples at 650 °C causes the formation of different new photoluminescent centers. Although little is known about the structure of these defects, it is observed that the defects effectively getter copper. Further annealing of the Ar-etched samples at 1050 °C causes the formation of Ar bubbles with an average diameter of about 5 nm.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon has been prepared at a plasma excitation frequency in the very-high-frequency band at 70 MHz with the glow discharge technique at substrate temperatures between 280 and 50 °C. The structural properties have been studied using hydrogen evolution, elastic recoil detection analysis, and infrared spectroscopy. The films were further characterized by dark and photoconductivity and by photothermal deflection spectroscopy. With respect to films prepared at the conventional frequency of 13.56 MHz considerable differences concerning the electronic and structural properties are observed as the substrate temperature is decreased from 280 to 50 °C. Down to a substrate temperature of 150 °C the electronic film properties change only a little and the total hydrogen content cH and the degree of microstructure that can be directly correlated to cH increase only moderately. Below 150 °C the electronic properties deteriorate in the usual manner but still the total hydrogen content does not exceed 21 at. % even at a substrate temperature of 50 °C. It is argued that the influence of the higher excitation frequency on the plasma and on the growth kinetics plays a key role in this context by allowing a highly effective dissociation of the process gas with the maximum ion energies remaining at low levels. It is concluded that deposition processes at higher excitation frequencies can have important technological implications by allowing a decrease of the deposition temperature without losses in the material quality.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 456-465 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A method for containerless liquid-phase processing was developed which has practical application in process and property research on virtually any material which is involatile at the melting point. It combines aerodynamic and acoustic forces to support and position the levitated material. The design provides forced convection control of the thermal boundary in the gas surrounding beam-heated specimens, which stabilizes the acoustic forces and allows acoustic positioning necessary to stabilize the aerodynamic levitation forces on molten materials. Beam heating and melting at very high temperatures was achieved. Experiments were conducted on specimens with diameters in the range 0.25–0.4 cm, of density up to 9 g/cm3, at temperatures up to 2700 K, and in oxygen, air, or argon atmospheres. Unique liquid-phase processing results included deep undercooling of aluminum oxide, glass formation at exceptionally small cooling rates, complete melting and undercooling of YBa2Cu3Ox superconductor materials, direct formation of the YBa2Cu3Ox from the liquid phase, and the vaporization of volatile constituents from a low-liquefaction point glass to form a refractory, high melting material. The application of rapid containerless batch processing operations to materials synthesis is discussed.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 83 (2000), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: We report formation of single- and two-phase glasses from rare-earth oxide–alumina materials. Liquids with the Y3Al5O12 and Er3Al5O12 compositions underwent a liquid–liquid phase transition which resulted in glasses with a cloudy appearance due to spheroids of one glass in a matrix of a second glass. The two glasses were isocompositional within the limits of experimental error. Clear, brilliant, single-phase glasses were obtained from La3Al5O12, ErLaYAl5O12, and compositions containing ≥5 mol% La2O3 substituted for the other rare-earth oxides. Formation of two glasses is attributed to nucleation and growth of the second liquid at a temperature below the equilibrium liquid–liquid transition temperature. Addition of lanthanum depresses the phase transition temperature below the glass transition temperature and the liquid–liquid phase transition is not observed. The results are discussed in the context of first-order liquid–liquid phase transitions (polyamorphism) and formation of single-phase glass from liquids that contain a high proportion of 4-coordinate aluminum ions.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 83 (2000), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: We report the first measurements of the structure factor, S(Q), and the pair distribution function, G(r), of Al6Si2O13 (3:2 mullite) in the normal and supercooled liquid states in the temperature range 1776–2203 K. Measurements are obtained by synchrotron X-ray scattering on levitated, laser-heated liquid specimens. The S(Q) shows a prepeak at 2.0 Å−1 followed by a main peak at 4.5 Å−1 and a weak feature at 8 Å−1. The G(r) shows a strong (Si,Al)–O correlation at 1.80 Å at high temperature that moves to 1.72 Å as the liquid is supercooled. The second and third nearest neighbor peaks at 3.0 and 4.25 Å sharpen with supercooling. The short-range structure of the high-temperature liquid is similar to the corresponding glasses produced by rapid quenching. Supercooling causes an increase in the concentration of tetrahedral Si4+ ions, which is manifested by the large shift in the first peak to lower ionic distance, r, values in G(r). The increase in tetrahedrally coordinated Si4+ ions is offset by an increase in octahedral Al3+ ions. The clustering of the SiO44− tetrahedral units results in increased viscosity of the liquid at temperatures below the melting point, which is consistent with Al6Si2O13 being a fragile liquid.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2237-2239 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically detected microwave-induced impact ionization of excitons and shallow donors is studied in Yb-doped InP grown by metalorganic chemical vapor deposition. The experimental results directly confirm that Yb3+ intrashell emission is induced by nonradiative recombination of Yb bound excitons due to an impurity Auger effect. Yb3+ ions in InP are found to bind excitons with the electron being localized first, followed by subsequent hole capture.
    Type of Medium: Electronic Resource
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