ISSN:
1432-0630
Keywords:
0.7.60.Ly
;
06.90.+v
;
42.79.−e
;
89.20.+a
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract We have adapted differential interference contrast Nomarski microscopy in the transmission configuration to the problem of mapping subsurface defects in semiconductors. We have demonstrated the ability to rapidly measure the depth of the precipitate-free-zone in silicon with a reproducibility of ±1 μm in whole Si wafers up to 200 nm in diameter, having an extrinsic doping concentration up to 7×1019 cm−3 and a nominal, as received, back side roughness. Because our subsurface defect profiler is completely non-destructive, product wafers can be inspected at various stages of processing and immediately returned to the production line.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00334212
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