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  • Chemistry  (38)
  • 23.20.Lv  (3)
  • 1
    ISSN: 1434-601X
    Keywords: 23.20.Lv ; 21.60.Cs ; 27.70.+q
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract In-beamγγ- andγγn-measurements have for the first time identified excited states in the 72 157 Hf85 nucleus and have established its yrast levels up to 6.5 MeV and I=(51/2). The results of parameter-free 11-particle recoupling calculations in the framework of the shell model for the configurationsπh 11 2/8 νf 7 2/3 andπh 11 2/8 νf 7 2/2 h9/2 are in excellent agreement with the observed levels up to 39/2 at 4.758 MeV. A weakly populated 52 ns 29/2+ yrast isomer at 2.876 MeV is assigned as the three-neutron configurationνf7/2h9/2i13/2.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 325 (1986), S. 37-43 
    ISSN: 1434-601X
    Keywords: 23.20.Lv ; 29.30.Cm ; 28.60.+s
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Fusion evaporation reactions were investigated to search for short lived isomeric states of nuclei near the proton drip line. Gamma spectra were measured, both singles and in delayed coincidence with evaporation residues implanted into a silicon detector after a velocity separation. A short lived activity was measured in the40Ca+40Ca →80Zr* reaction at excitation energies between 55 and 79 MeV. A half-life of 3.20 (10) μs was determined from delayed coincidences between evaporation residues and gamma rays. AtE *=55 MeV the cross section is 9 mb. The activity was assigned to an isomeric state in76Rb by investigation of excitation functions. The isomer decays by emission of four gamma rays with energies of 70.55(5), 101.30(4), 145.11 (5), and 246.32(10) keV. A first level scheme is proposed assigning to the isomeric state an energy of 316.94(7) keV above the ground state. The isomer decaying into the low spin 1(−) ground state band is explained from systematics as a band head of a high spin (4+) (πg9/2,νg9/2) structure. A high hindrance factor of 3×106 forE1 radiation compared to a single particle transition is due possibly to a change of the core particle structure in the transition.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1434-601X
    Keywords: 21.60.Cs ; 23.20.Lv ; 27.70.+q
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The N=84 nucleus154Yb was investigated through the106Cd(54Fe,α2p) reaction. We found the 16+ yrast level in this nucleus to be formed by the (πh11/2 2 νf7/2h9/2) configuration, in contrast to the lower-Z isotones where (πh11/2 2 νf7/2 2)16+ is the yrast state. Manybody shell model calculations with empirical two-body interactions support our conclusion.
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  • 4
    Electronic Resource
    Electronic Resource
    Weinheim [u.a.] : Wiley-Blackwell
    Materials and Corrosion/Werkstoffe und Korrosion 30 (1979), S. 89-89 
    ISSN: 0947-5117
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 0947-5117
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Weinheim [u.a.] : Wiley-Blackwell
    Materials and Corrosion/Werkstoffe und Korrosion 41 (1990), S. 756-760 
    ISSN: 0947-5117
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Description / Table of Contents: Oxidationsverhalten von Hartstoffschichten aus CrNx und (Cr,Al)NxDurch reaktives Magnetron-Sputtering hergestellte Nitrid-Hartstoffschichten aus CrNx und (Cr,Al)Nx wurden in Luft bei Temperaturen zwischen 500°C und 900°C bis zu 16 Stunden lang oxidiert. Ursprüngliche und oxidierte Proben wurden durch Auger-Elektronenspektroskopie, Rasterelektronenmikroskopie und Röntgenbeugung untersucht. Die Ergebnisse zeigen, daß die Oxidation von Beschichtungen aus CrNx durch das Wachstum einer Chromoxidschicht gekennzeichnet ist, das durch Diffusion von Cr aus der Nitridschicht bestimmt wird. Unterhalb der Oxidschicht entsteht eine an Cr verarmte und mit N angereicherte Schicht. Beschichtungen mit dem ternären (Cr,Al)Nx sind bei allen Temperaturen zwischen 500°C und 900°C etwa fünfmal mehr oxidationsbeständig, als solche aus CrNx. Die Oxidschicht auf (Cr,Al)Nx zeigt eine ausgeprägte Variation der Zusammensetzung mit der Tiefe. Diese kann im wesentlichen durch das Vorherrschen einer äußeren Cr-reichen (Cr,Al)-Oxidschicht gedeutet werden, die sich nach innen zu in einer Al-angereicherten (Cr,Al)-Oxynitridschicht fortsetzt. Im Gegensatz zu CrNx findet man eine breite Interdiffusionszone von N und O. In beiden Fällen wird der Oxidationsvorgang hauptsächlich durch die Diffusion von Cr bestimmt.
    Notes: Reactively magnetron-sputtered CrNx and (Cr,Al)Nx hard costings were oxidized in air at temperatures between 500°C and 900°C for periods up to 16 h. The original and the oxidized samples were characterized by scanning electron microscopy, X-ray diffraction and scanning Auger electron spectroscopy. The results show that CrNx coatings oxidize by growth of chromium oxide layer on top of the coating governed by outward diffusion of Cr. Below the oxide layer, a Cr-depleted and N-enriched intermediate nitride layer is left. The ternary (Cr,Al)Nx nitride coating is about five times more oxidation resistant than CrNx at all temperatures between 500°C and 900°C. The oxide layer on (Cr,Al)Nx shows a strong variation in composition with depth, which can be interpreted as a main oxide layer of a Cr-rich (Cr,Al) oxide followed by an Al-enriched (Cr,Al) oxynitride. In contrast to CrNx, a wide interdiffusion zone of N and O is found. In both cases the oxidation process is mainly controlled by Cr diffusion.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Weinheim [u.a.] : Wiley-Blackwell
    Materials and Corrosion/Werkstoffe und Korrosion 42 (1991), S. 169-178 
    ISSN: 0947-5117
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Description / Table of Contents: Auger-spectroscopic investigations into pitting corrosion of FeCr, FeMo and FeCrMo alloysA single pit was produced on binary iron-chromium (Fe17Cr), iron-molybdenum (Fe1Mo, Fe3Mo, and Fe5Mo) and ternary iron-chromium-molybdenum alloys (Fe17CrxMo, x = 1, 3, 7 wt.%) in 0.5 M H2SO4 with Cl- additions (0.02 to 0.08 molar) at room temperature. Compositional changes at the bottom of the pit and in the surrounding passive film were determined using high resolution Auger-Electron Spectroscopy (AES). The chromium and molybdenum content of the passive layers are not changed in the presence of Cl- and there is no incorporation of chlorine in the passive film as long as the films were formed in a chlorine-free electrolyte and Cl- was added later. At the bottom of the pits salt films could be determined in all cases after removing the electrolyte with filter paper. These salt films are strongly enriched in chromium, molybdenum and chlorine. The salt film was not detectable for Fe-Cr after rinsing the samples with distilled water, whereas in the case of molybedenum additions the salt film could not be washed away with water.
    Notes: Ein einzelnes Loch wurde auf der passiven Oberfläche von Eisen-Chrom-(Fe17Cr), Eisen-Molybdän-(Fe1Mo, Fe3Mo und Fe5Mo) und ternären Eisen-Chrom-Molybdän-Legierungen (Fe17CrxMo, x = 1, 3, 7 Gew.%) durch Lochkorrosion in 0,5 M H2SO4 mit Cl--Zusätzen von 0,02 und 0,08 Mol/l bei Raumtemperatur erzeugt. Die Zusammensetzung des Lochbodens und der umgebenden Passivschicht wurde mit Hilfe der hochauflösenden Augerelektronenspektroskopie (AES) bestimmt. Der Chrom- und Molybdängehalt des Passivfilmes wird durch die Anwesenheit der Cl--Ionen nicht verändert, und es wird kein Chlor in den Passivfilm eingebaut, solange der Film in chloridfreiem Elektrolyt gebildet und Cl- später zugesetzt wurde. Auf dem Lochboden konnten in allen Fällen Salzfilme festgestellt werden, nachdem der Elektrolyt mit Filterpapier aufgesogen wurde. Diese Salzfilme waren stark mit Chrom, Molybdän und Chlor angereichert. Bei der Fe-Cr-Legierung konnte der Salzfilm nach Spülung mit Wasser nicht mehr nachgewiesen werden, während bei den molybdänhaltigen Legierungen der Salzfilm mit Wasser nicht entfernt werden konnte.
    Additional Material: 12 Ill.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 15 (1990), S. 794-796 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Sputter-deposited multilayers of Si and Ta with a nominal period length of a double layer (Ta + Si) of 20 nm were studied with AES depth profiling and with transmission electron microscopy (TEM). The asymmetric shape of the measured Si layer profiles was fitted to model calculations based on preferential sputtering of Si and an atomic mixing zone length of 4 nm for 3 keV Ar+ ions at a 36° incidence angle. TEM images of cross-sections of the original sample show sharp Si/Ta and Ta/Si interfaces, with a width of ∼ 0.5 nm. The atomic mixing zone length of the sputter-profiled sample was observed directly by TEM and was determined to be 4.0 nm, in accordance with the AES profile evaluation. It is concluded that the observed asymmetric broadening of the shape of the measured AES sputtering profiles is due mainly to atomic mixing and is enhanced by preferential sputtering of Si.
    Additional Material: 3 Ill.
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  • 9
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 5 (1983), S. 210-216 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Thin films of anodically formed Ta2O5 and Nb2O5 on polycristalline Ta and Nb, respectively, are analysed with AES during sputtering with Ar+ ions at energies between 0.5 keV and 5 keV. A sputtering induced depletion of oxygen at the surface is observed in both oxides. The kinetics of this depletion and the steady-state composition at the surface of the samples are studied as a function of the primary ion energy. The results are interpreted using a modification of the model of Ho et al. (1976) for the preferential sputtering of alloys. The thickness of the transient layer increases non-linearly from 1.6 to 3.4 nm with increasing ion energy. Below 2 keV, the surface depletion of oxygen increases with decreasing ion energy and is constant above 2 keV up to 5 keV. The results are similar for both oxides. At 2 keV, the minimum measured width of the oxide/metal interface is 2 nm for Ta2O5/Ta and is about two times larger for Nb2O5/Nb. In both cases it increases with the square root of the ion energy and it is independent on the oxide layer thickness between 10 nm and 150 nm.
    Additional Material: 6 Ill.
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  • 10
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 16 (1990), S. 335-336 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Type of Medium: Electronic Resource
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