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  • 61.80J  (2)
  • PACS: 78.65; 61.80J  (1)
Materialart
Erscheinungszeitraum
Schlagwörter
  • 1
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 44 (1987), S. 153-155 
    ISSN: 1432-0630
    Schlagwort(e): 78.65 ; 61.80J
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Ion irradiation of thin layers of crystalline semiconductors induces a phase transition to the amorphous state. The concomitant optical contrast between unirradiated, crystalline, and irradiated, amorphous, material may be used for pattern fabrication in the submicron range. This process will be explained by the example of silicon single-crystal layers on sapphire.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 45 (1988), S. 69-72 
    ISSN: 1432-0630
    Schlagwort(e): 78.65 ; 61.80J
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Single-crystal layers of silicon on sapphire have been irradiated with Ne and Kr ions at room temperature. The concomitant changes in optical absorption have been measured as a function of photon energy. The absorptivity of the amorphized silicon is about one order of magnitude higher as compared to the crystalline state in the photon energy interval of 1.5–3 eV. This is sufficient for generating optical patterns of high contrast by irradiation of selected parts of the wafer.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 71 (2000), S. 565-569 
    ISSN: 1432-0630
    Schlagwort(e): PACS: 78.65; 61.80J
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract. The optical properties of crystalline insulating materials can markedly be modified by irradiation with energetic ions. The exposed areas of such materials absorb and reflect light more strongly than non-irradiated ones. In this way, optical contrast is created. With modern equipment, ion beams of sufficient intensity can be focused to submicron dimensions. Thus, both analog and digital information can be recorded with pixel densities of Gbit/cm2 to Tbit/cm2. In particular, crystalline films of group-IV elements of the periodic system, such as Si, SiC and CD (diamond), are best suited for this novel ionographic process. The physical foundations of this technology and the resulting properties of the recorded data will be discussed.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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