ISSN:
1432-0630
Schlagwort(e):
81.15.−z
;
81.40.−z
;
68.55.−a
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract The formation of (TixW1−x)Si2/(TixW1−x)N, by rapid thermal processing of TixW1−x on Si in an N2 ambient is investigated. An activation energy of 1.7 eV is obtained for silicide formation. A distinct snow-ploughing of As atoms is observed during silicide formation whereas the interfacial B concentration decreases with increasing silicide formation temperature. The diffusion barrier properties of the (TixW1−x)Si2/(TixWi1−x)N stack in contact with Al is investigated upon post-metal annealing. No interaction between the layers is found for temperatures as high as 475°C after 60 min. The improved thermal stability of the (TixW1−x)N layer in contact with Al is attributed to nitrogen blocking of the grain boundaries.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00324727
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