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  • 1
    Electronic Resource
    Electronic Resource
    Rapid thermal processing for simultaneous annealing of shallow implanted junctions and formation of their TiSi"2 contacts
    Amsterdam : Elsevier
    Physica B+C 129 (1985), S. 192-196 
    Details
    ISSN: 0378-4363
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0378-4363(85)90567-4
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  • 2
    Electronic Resource
    Electronic Resource
    Strain characterization of CoSi2/n-Si0.9Ge0.1/p-Si heterostructures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 440-442 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the structural characterization of CoSi2/n-Si0.9Ge0.1/p-Si heterostructures. Silicon molecular beam epitaxy is combined with Co sputtering to obtain these structures. The strain in the Si1−xGex is investigated after the formation of the CoSi2 by using high-resolution x-ray diffraction mapping in reciprocal space and cross-sectional transmission electron microscopy. The results show that in order to keep the strain in Si1−xGex unaffected, a sacrificial Si layer is needed. It was possible to obtain transistor action, but with low-current gain (β).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111122
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical and mechanical characterization of chemical vapor deposition of tungsten on sputter-deposited TiN layers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7313-7322 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten (W) films are deposited from tungsten hexafluoride on sputter-deposited TiN adhesion layers in a cold-wall chemical vapor deposition reactor. The film resistivity of the W films is found to be thickness dependent. It decreases monotonically with increasing film thickness. Typical resistivity values of 40-nm-thick W films are about 19.3–23.4 μΩ cm, depending on the structure of the underlying TiN layer used. The resistivity of a 980-nm-thick W film is 9.8 μΩ cm. Oxygen and fluorine impurities, as well as structural difference in the W films are found to be the major causes for the resistivity variations. Lowering impurity level and/or increasing W crystallite size can decrease film resistivity. The stress of all the W films is found to be tensile, independent of the structure of the TiN layers. However, the absolute value of the stress is intimately associated with the structure of the TiN layers. The stress values can differ by a factor of more than 2 for the 40-nm-thick W films deposited on the different underlying TiN layers. The amplitude of stress also monotonically decreases with increasing film thickness. Consequently, the difference in stress induced by the difference in the underlying TiN layers gradually disappears as the film thickness increases. A strong correlation between the stress and the film texture is found. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360379
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of epitaxial β-FeSi2 on (100) silicon using Fe–Ti–Si diffusion couples (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 599-601 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial semiconducting iron–disilicide grains have been formed using an Fe–Ti bilayer on (100) silicon. The reaction kinetics of the Fe–Ti–Si diffusion couple have been studied in detail as a function of annealing conditions, and the intermediate titanium thickness. Both rapid thermal annealing and long-time furnace annealing have been used in this investigation. After a two-stage annealing sequence, with a selective wet etch removal of the unreacted top metal stack in between, a distinct trilayered structure was formed. This trilayer was found to consist of a top layer of smaller β-FeSi2 grains of random orientation, an amorphous Ti–O–Fe–Si layer with nanocrystallites embedded, and a bottom layer of uniformly large coherently epitaxial β-FeSi2 grains. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360580
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical transport in (100)CoSi2/Si contacts (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2525-2536 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed investigation of the electrical transport in (100) CoSi2/Si contacts is presented. The transport properties of epitaxial CoSi2 films, obtained both by ion-beam synthesis and by solid-state reaction of a Ti/Co bimetallic layer, are compared with the transport properties of conventional polycrystalline CoSi2 layers. The electrical resistivity, the magnetoresistance, and the Hall effect are measured on Hall bars for temperatures ranging from 1.2 to 300 K and magnetic fields up to 5 T. Very high values of the order parameter kFL0 are observed, indicating that the investigated samples are of very high purity and crystalline order. In addition, the electric transport at the CoSi2/Si interface is studied by current-voltage and capacitance-voltage measurements on Schottky diode structures for temperatures ranging from 173 to 333 K. Ideality factors close to unity are observed for the highest temperatures, for the lower temperatures the ideality factors are found to increase with decreasing temperatures. The observed temperature dependence of the ideality factor and the Schottky barrier height can be attributed to Schottky barrier inhomogeneities. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358782
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  • 6
    Electronic Resource
    Electronic Resource
    Degradation of doped Si regions contacted with transition-metal silicides due to metal-dopant compound formation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5327-5334 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of doped Si with respect to a contacting silicide is investigated for TiSi2, VSi2, CoSi2, ZrSi2, MoSi2, TaSi2, WSi2, and PtSi on As- and B-doped Si by calculation of the critical portion of the ternary diagram. From the thermodynamic calculations it is shown that high B concentrations in Si will be unstable underneath an overlaying TiSi2, TaSi2, and ZrSi2 film. In the case of As-doped Si, high concentrations in Si are unstable with respect to an overlaying TiSi2, TaSi2, ZrSi2, and PtSi film. The effect of metal-dopant compound formation is not expected to occur in the case of VSi2, MoSi2, and CoSi2, and probably also not for WSi2, on B-doped Si. It is similarly not expected to occur in the case of VSi2, CoSi2, MoSi2, and WSi2 on As-doped Si. The relevance of these thermodynamic predictions for technological applications is illustrated by experimental results on the diffusion of B and As from various implanted silicide layers. From comparison of thermodynamic properties of M-P and M-As compounds, it was shown that no advantage is expected from P over As as far as metal-dopant compound formation is concerned.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343724
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  • 7
    Electronic Resource
    Electronic Resource
    Metal-dopant-compound formation in TiSi2 and TaSi2: Impact on dopant diffusion and contact resistance (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 693-707 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The refractory metal disilicides TiSi2 and TaSi2 were investigated for their usefulness as dopant diffusion sources. During furnace annealing and rapid thermal processing, strong decomposition reactions occur between the dopants D (B or As) and the respective silicide (MSi2) to form MxDy compounds. With the help of special sample preparation methods and various analytical techniques, the compound phases TiB2, TiAs, TaB2, and TaAs were unambiguously detected. The fraction of freely diffusing B in TaSi2 is determined to be below 5% of the total dose; by far, the major part of the dopant is bound within the TaB2 phase detected. Careful sample preparation and analysis of secondary-ion-mass spectrometry profiles is necessary to avoid artifacts caused by these compound particles. The MxDy-compound formation has detrimental consequences: The solubility of arsenic and even more of boron in TiSi2 and TaSi2 is limited to rather low-concentration levels (e.g., B in TaSi2: 4 × 1018 B/cm3 〈 CB(900 °C) 〈 1.6 × 1019 B/cm3) and the outdiffusion into poly- or monocrystalline silicon is strongly retarded. Also, the low interface dopant concentrations achievable result in unacceptably high values of contact resistance. The observations on metal-dopant- (M-D-) compound formation are demonstrated to agree well with the predictions from thermodynamic calculations on the respective M-Si-D system. The effects on junction formation are compared to the case of WSi2 and CoSi2, which, from a parallel study, are known not to form compounds. In all cases these comparisons support our statements on the tremendous impact of M-D-compound formation, because much improved data on diffusion and junction formation were obtained for CoSi2 and WSi2. The same holds for a comparison on contact resistances for silicide diffused junctions, which was performed for TiSi2 and CoSi2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349625
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  • 8
    Electronic Resource
    Electronic Resource
    WSi2 and CoSi2 as diffusion sources for shallow-junction formation in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 708-719 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The redistribution of B and As ions implanted into thin layers of WSi2 and CoSi2 on poly- or monocrystalline Si and the outdiffusion into the Si substrate during furnace annealing (FA) and rapid thermal processing (RTP) were investigated by several analytical techniques. Shallow junctions (depth xj 〈 100 nm) with interface concentrations Cint close to the solid solubility of the respective dopant in Si (Cint(approximately-greater-than)3×1020 cm−3 for As; (Cint (approximately-greater-than) 8 × 1019 cm−3 for B) were obtained with RTP. For FA above 800 °C, the diffusion of B from CoSi2 into Si results in a drop of Cint 〈 2 × 1019 cm−3 because of strong B segregation and probably reactive loss at the SiO2/CoSi2 interface. No evidence on metal-dopant-compound formation could be found. The dopant redistribution is demonstrated to be a superposition of lattice and grain-boundary diffusion, solubility limits, layer inhomogeneities, dopant segregation at the interface and grain boundaries, and probably phase transformation of the dopants segregated at the SiO2/silicide interface. Electrical results such as, e.g., CoSi2 diode leakage currents (≈1 nA/ cm2) and contact resistances ( 2–5 × 10−7 Ω cm2 for RTP) clearly show that the formation of shallow silicided junctions by diffusion from an implanted silicide is a highly useful technological approach.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349626
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  • 9
    Electronic Resource
    Electronic Resource
    Two-step room temperature grain growth in electroplated copper (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3642-3645 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroplated copper exhibits some surprising changes at room temperature in sheet resistance, stress, and microstructure. This behavior, now known as self-annealing, is shown here to be intimately linked to the composition of the plating bath and the resulting incorporation of organic additives in the Cu layer. Their addition is a necessary condition for self-annealing to occur, but slows down the process for higher concentrations. The phenomenon also depends critically on film thickness, showing an accelerated transformation when film thickness increases. This dependence is explained in terms of a very rapid primary crystallization from the top surface down just after deposition, followed by a slower lateral recrystallization producing large secondary grains. The stress and sheet resistance during recrystallization are identified as two noncorrelated variables. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371272
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  • 10
    Electronic Resource
    Electronic Resource
    Study of the rapid thermal nitridation and silicidation of Ti using elastic recoil detection. II. Ti on SiO2 (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5110-5114 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper describes a study of the rapid thermal processing of Ti thin films on SiO2 in Ar and N2 in the temperature range 400–1100 °C. The resulting layer structures were analyzed by means of Rutherford backscattering spectrometry and elastic recoil detection. The latter technique yielded quantitative information with a low detection limit of the depth distribution of H, O, and N. The underlying SiO2 film starts to react with the Ti at 500 °C. Oxygen originating from the reduction of SiO2 is dissolved in the Ti layer. As long as the solubility limit of O in Ti is not reached, nitridation of the Ti in the surface region causes O to be snow-plowed out of the top surface layers. The reaction of Ti with SiO2 is characterized by an activation energy of 0.7 eV. For the case of rapid thermal processing in N2, the evolution of the layer structure is governed by a competition between nitridation and the above-mentioned oxidation of Ti. In between the Ti oxide and the remaining SiO2, a silicide of probable composition Ti5Si3 is formed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340411
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