ISSN:
1090-6487
Keywords:
72.20.My
;
73.40.Hm
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The quantization of the Hall resistivity ρxy in the form of plateaus in the dependence of ρxy on the magnetic field B is observed in the semiconductors Bi2Te3 and Sb2Te3; the minima of the transverse magnetoresistivity ρxx correspond to the start of the plateaus. The quantization of ρxy is due to the presence of a current-carrier reservoir. An impurity band with a high density of states or a different band with a much higher current-carrier effective mass serves as the reservoir.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.568260
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