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Spatial distribution of impurities in delta-doped n-type GaAs (1988)

Ullrich, B. ; Schubert, E. F. ; Stark, J. B. ; [weitere]

Springer

Applied physics 47 (1988), S. 123-129

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Details

ISSN: 1432-0630

Schlagwort(e): 81.10 ; 73.60 ; 75.30

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract Capacitance-voltage (CV) profiling measurements on delta-doped n-type GaAs reveal extremely narrow peaks with a full-width at half-maximum of 40 Å. Comparison of experimental with self-consistently calculated CV profiles demonstrates that Si impurities are localized on a length scale of a lattice constant in delta-doped GaAs. Diffusion and segregation are of minor importance. The basic theory of CV measurements on quantummechanical systems such as delta-doped semiconductors is developed and presented.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00618876

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