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  • 45.30P  (1)
  • 73.60-n  (1)
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  • 1
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 48 (1989), S. 559-566 
    ISSN: 1432-0630
    Schlagwort(e): 73.40 ; 73.60H ; 68.35P ; 45.30P ; 81.15
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The adhesion quality of amorphous hydrogenated carbon films (a-C:H) on semiconductor substrates depends to a large degree on the properties of the interface. The present work complements the photoemission results of the preceding paper with a detailed investigation of the atomic structure of the a-C:H/Si and a-C:H/GaAs interfaces. We show that the method of substrate cleaning and the deposition parameters affect the thickness of the interfacial layer and the interface roughness. The carbide compounds that form in the interfacial layer are found to be amorphous and we present evidence for the precipitation of metallic Ga at the a-C:H/GaAs interface. Finally, we have determined the extent of atomic intermixing in the interfacial region and compare our results with different mechanisms of adhesion.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    ISSN: 1432-0630
    Schlagwort(e): 79.20-m ; 79.60-i ; 73.60-n
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Highly oriented pyrolytic graphite (HOPG) as well as polycrystalline graphite (pc-graphite) were bombarded with 3.5 keV H+ ions by means of a Penning ion source. The implanted graphite was characterized by in situ electron spectroscopy techniques such as UPS, XPS and EELS. Our UPS valence band measurements of the hydrogen saturated graphite reveal it to be an insulating phase, and XPS measurements show a shift of the C1s core level to higher binding energy with respect to pristine graphite. This behavior is explained by a Fermi energy shift upon hydrogen bombardment of graphite. In addition, a close resemblance in the electronic structure of hydrogen bombarded graphite and amorphous hydrogenated carbon films (a-C:H) is shown which suggests the modification of pristine graphite to an amorphous network [1] of mostly tetrahedrally bonded carbon atoms by hydrogen implantation.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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