Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Photoelectron spectroscopy studies of chemical vapor deposition of Ta from a TaF5 precursor on Si and SiO2 substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3899-3906 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The increasing need for metallization of microelectronic structures involving deep trenches and high aspect ratio features has sparked considerable interest in chemical vapor deposition metallization schemes. In this work the results of photoemission investigations of the substrate-driven reduction of TaF5 to Ta metal on Si(111) and SiO2 substrates are reported. At moderate temperatures the reaction showed no selectivity between these two substrates, in contrast to the process with the similar molecule WF6. At 400 °C metallic Ta films could be grown on both Si and SiO2; however, x-ray photoelectron spectroscopy measurements show that the bonding of the film to Si(111) is dominated by fluorine atoms at the interface, whereas film growth on SiO2 tends to form an oxide interface with TaOF3 stoichiometry. Annealing of the deposited film to about 700 °C leads to Si diffusion to the surface which is accompanied by the release of fluorine from the film. The deposition of TaF5 on Si(111) at 250 °C results initially in a partly dissociative metallic deposition followed by a non-dissociative molecular chemisorption. Our experiments suggest the Si substrate to be reactive enough at the initial state of the deposition to break up theTaF5 molecule but that the process is quickly self-passivating.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349198
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopic studies of chemical vapor deposition with TaF5 precursor on polyimide surfaces (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4912-4917 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemical vapor deposition of Ta on the polyimide pyromellitic dianhydride oxydianiline was attempted using TaF5 as the precursor. The deposition temperature was 350 °C. Photoelectron spectroscopy measurements show that Ta is bound in a high oxidation state. Our data show strong evidence that initially the ternary compound TaOF3 is formed on polyimide in a first step. The carbonyl group is the main reactive site upon TaF5 exposure. It has to be noted that no passivation of the surface takes place and that there is no limit for film thickness. At very high doses, however, the film concentration at the surface is suggestive for the stable compound TaO2F. This observation is explained in terms of the formation of a metastable TaOF3 compound in the first stages of film growth and a phase transformation to TaO2F at larger thicknesses. Annealing experiments to 500 °C suggest the transformation to the oxide Ta2O5 that is strongly related to the almost complete loss of fluorine from the film upon heating.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352058
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...