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  • Digitale Medien  (7)
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  • Digitale Medien  (7)
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  • 1
    Digitale Medien
    Digitale Medien
    Photoelectron spectroscopy studies of chemical vapor deposition of Ta from a TaF5 precursor on Si and SiO2 substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3899-3906 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The increasing need for metallization of microelectronic structures involving deep trenches and high aspect ratio features has sparked considerable interest in chemical vapor deposition metallization schemes. In this work the results of photoemission investigations of the substrate-driven reduction of TaF5 to Ta metal on Si(111) and SiO2 substrates are reported. At moderate temperatures the reaction showed no selectivity between these two substrates, in contrast to the process with the similar molecule WF6. At 400 °C metallic Ta films could be grown on both Si and SiO2; however, x-ray photoelectron spectroscopy measurements show that the bonding of the film to Si(111) is dominated by fluorine atoms at the interface, whereas film growth on SiO2 tends to form an oxide interface with TaOF3 stoichiometry. Annealing of the deposited film to about 700 °C leads to Si diffusion to the surface which is accompanied by the release of fluorine from the film. The deposition of TaF5 on Si(111) at 250 °C results initially in a partly dissociative metallic deposition followed by a non-dissociative molecular chemisorption. Our experiments suggest the Si substrate to be reactive enough at the initial state of the deposition to break up theTaF5 molecule but that the process is quickly self-passivating.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349198
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  • 2
    Digitale Medien
    Digitale Medien
    X-ray photoelectron spectroscopic studies of chemical vapor deposition with TaF5 precursor on polyimide surfaces (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4912-4917 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Chemical vapor deposition of Ta on the polyimide pyromellitic dianhydride oxydianiline was attempted using TaF5 as the precursor. The deposition temperature was 350 °C. Photoelectron spectroscopy measurements show that Ta is bound in a high oxidation state. Our data show strong evidence that initially the ternary compound TaOF3 is formed on polyimide in a first step. The carbonyl group is the main reactive site upon TaF5 exposure. It has to be noted that no passivation of the surface takes place and that there is no limit for film thickness. At very high doses, however, the film concentration at the surface is suggestive for the stable compound TaO2F. This observation is explained in terms of the formation of a metastable TaOF3 compound in the first stages of film growth and a phase transformation to TaO2F at larger thicknesses. Annealing experiments to 500 °C suggest the transformation to the oxide Ta2O5 that is strongly related to the almost complete loss of fluorine from the film upon heating.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352058
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  • 3
    Digitale Medien
    Digitale Medien
    Influence of process gas and deposition energy on the atomic and electronic structure of diamond-like (a-C:H) films
    Amsterdam : Elsevier
    Vacuum 41 (1990), S. 1374-1377 
    Details
    ISSN: 0042-207X
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Maschinenbau , Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1016/0042-207X(90)93961-H
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  • 4
    Digitale Medien
    Digitale Medien
    Amorphous hydrogenated carbon films on semiconductors (1989)
    Springer
    Applied physics 48 (1989), S. 559-566 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 73.40 ; 73.60H ; 68.35P ; 45.30P ; 81.15
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The adhesion quality of amorphous hydrogenated carbon films (a-C:H) on semiconductor substrates depends to a large degree on the properties of the interface. The present work complements the photoemission results of the preceding paper with a detailed investigation of the atomic structure of the a-C:H/Si and a-C:H/GaAs interfaces. We show that the method of substrate cleaning and the deposition parameters affect the thickness of the interfacial layer and the interface roughness. The carbide compounds that form in the interfacial layer are found to be amorphous and we present evidence for the precipitation of metallic Ga at the a-C:H/GaAs interface. Finally, we have determined the extent of atomic intermixing in the interfacial region and compare our results with different mechanisms of adhesion.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00617857
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  • 5
    Digitale Medien
    Digitale Medien
    Amorphous hydrogenated carbon films on semiconductors (1989)
    Springer
    Applied physics 48 (1989), S. 549-558 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.60 ; 73.40 ; 73.60 ; 73.60H ; 71.25M ; 81.15 ; 46.30P
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The interface properties of hydrogenated amorphous carbon films (a-C:H) on Si and GaAs substrates have been studied by in-situ photoelectron spectroscopy measurements. The a-C:H films have been deposited by direct ion beam deposition. Distinct differences in the interface formation have been observed during film depositon on the two substrates. The data clearly reveal a decomposition of the GaAs at the interface which can be related to the reduced adhesion of a-C: H on the compound semiconductor substrate.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00617856
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  • 6
    Digitale Medien
    Digitale Medien
    Direct ion beam deposition of polymeric styrene films and in situ characterization by electron spectroscopy (1990)
    Springer
    Applied physics 51 (1990), S. 526-536 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 7360H ; 7960 ; 8115 ; 8120S
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Polymeric styrene films with thicknesses ranging from about one nm up to a few μm have been deposited by means of a direct ion beam deposition (IBD) technique. The deposition energy, which can be chosen independently of the parameters which govern the plasma conditions, has been varied between few eV and 1000 eV. The correlation between the deposition parameters and the resulting film properties in terms of the electronic structure is discussed. The in situ characterization by electron spectroscopy has proved to be a very useful characterization method and ultraviolet photoelectron spectroscopy in particular revealed an extremely high sensitivity to structural differences in the deposited films. The polymeric films have also been characterized by scanning electron microscopy and optical spectroscopy. These techniques have also served to compare films prepared by the direct IBD technique with films obtained by standard rf plasma polymerization (RFPP) in a tubular reactor. Significant differences have been found which are dependent on the deposition parameters; these are discussed in detail.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00324737
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  • 7
    Digitale Medien
    Digitale Medien
    Electron spectroscopy measurements on hydrogen implanted graphite and comparison to amorphous hydrogenated carbon films (a-C:H) (1992)
    Springer
    Applied physics 54 (1992), S. 57-60 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.20-m ; 79.60-i ; 73.60-n
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Highly oriented pyrolytic graphite (HOPG) as well as polycrystalline graphite (pc-graphite) were bombarded with 3.5 keV H+ ions by means of a Penning ion source. The implanted graphite was characterized by in situ electron spectroscopy techniques such as UPS, XPS and EELS. Our UPS valence band measurements of the hydrogen saturated graphite reveal it to be an insulating phase, and XPS measurements show a shift of the C1s core level to higher binding energy with respect to pristine graphite. This behavior is explained by a Fermi energy shift upon hydrogen bombardment of graphite. In addition, a close resemblance in the electronic structure of hydrogen bombarded graphite and amorphous hydrogenated carbon films (a-C:H) is shown which suggests the modification of pristine graphite to an amorphous network [1] of mostly tetrahedrally bonded carbon atoms by hydrogen implantation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00348131
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