Electronic Resource
Springer
The European physical journal
353 (1995), S. 127-140
ISSN:
1434-601X
Keywords:
77.55
;
85.50
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract In the evolution of silicon-based integrated circuits towards Giga-bit technologies, high-quality dielectric films of nanometer dimensions are needed. The successful fabrication of such ultrathin films on silicon substrates requires a good understanding of their physicochemical characteristics, their growth kinetics, and their growth mechanisms. In this research field, ion beam analytic techniques play an important role. This role as well as future developments are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01295890
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