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  • 1
    Electronic Resource
    Electronic Resource
    Interdiffusion, reaction, and stability in a thin film iron-aluminium bilayered system (1989)
    Springer
    Applied physics 48 (1989), S. 481-488 
    Details
    ISSN: 1432-0630
    Keywords: 68.55N ; 68.55 ; 68.35
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In this work we describe the results of Rutherford backscattering spectrometry, sheet resistivity measurements, X-ray diffractometry and conversion electron Mössbauer spectroscopy performed on thin film Fe-Al bilayered samples submitted to high vacuum furnace annealing. Isothermal anneals were performed at 570 K for time intervals ranging from 60 to 600 min. It is demonstrated that the diffusion of Al into Fe is smaller than the diffusion of Fe into Al for temperatures below 600 K. Sequential isochronous thermal anneals of 60 min were performed at temperatures ranging from 570 to 870 K, in order to study the stability of the formed phases. The stable Fe2Al5 intermetallic compound formed at 570 K decomposes at about 650 K, and the FeAl6 intermetallic compound appears at temperatures around 750 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619722
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  • 2
    Electronic Resource
    Electronic Resource
    On the behavior of deuterium in ultrathin SiO2 films upon thermal annealing (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 450-452 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Following the observation of the large isotopic effect in D2 passivated gate dielectrics [J. Lyding, K. Hess, and I. C. Kizilyalli, Appl. Phys. Lett. 68, 2526 (1996)], we studied the behavior of deuterium in ultrathin SiO2 films by nuclear reaction analysis techniques. Accurate concentrations of deuterium in the films, deuterium depth distributions, and deuterium removal from the film upon thermal annealing in vacuum have been examined. For D2 passivated films, we found rather high concentrations of deuterium near the SiO2/Si interface, well above both the solubility of deuterium in silica and the maximum concentration of electrically active defects at the interface. Our results suggest a complex multistep mechanism of thermally activated deuterium removal from the film, which probably consists of D detrapping, diffusion, and desorption steps. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120801
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  • 3
    Electronic Resource
    Electronic Resource
    Comment on "Ion mixing of metal/Al bilayers near 77 K'' [Appl. Phys. Lett. 54, 413 (1989)] (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 513-514 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The correct mixing efficiency for the Fe/Al bilayer (900 keV Xe +3 , 77K) is presented in the context of the recent analysis by Ma, IE.E., Work man, W.L〉, Johnson, W.L., and Nicolet, M.A. (AIP)
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101864
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  • 4
    Electronic Resource
    Electronic Resource
    Atomic transport across the interfaces during the formation of ultrathin silicon oxide/nitride/oxide films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1970-1972 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The redistribution of O and N during the final, thermal oxidation in dry O2 step in the formation of ultrathin silicon oxide/nitride/oxide dielectric films (ONO) was investigated using isotopic tracing and depth profiling with nanometer resolution. The results show that the final oxidation step induces atomic transport of O and N species in the system, such that the formed ONO structures are not stacked layer structures, but rather a silicon oxynitride ultrathin film, having moderate concentrations of N in the near-surface and near-interface regions, and a high N concentration in the bulk. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122338
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  • 5
    Electronic Resource
    Electronic Resource
    Compositional and magnetic properties of iron nitride thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7514-7519 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The compositional and magnetic properties of iron-nitride thin films deposited by dc reactive magnetron sputtering under various nitrogen partial pressure conditions have been investigated by x-ray diffraction, Mössbauer and Auger electron spectroscopy as well as magnetic measurements. The x-ray diffraction patterns indicate a mixed phase composition. 57Fe Mössbauer spectroscopy shows that part of the nitrogen atoms are randomly distributed on interstitial sites with the formation of nonstoichiometric compounds. The excessive width of the Mössbauer lines indicates the degree of disorder of the different iron nitride precipitates. The nitrogen concentration as a function of depth is obtained by sputter-etched Auger electron spectroscopy. Furthermore, the ferromagnetic films show moderate saturation magnetization and coercivities at room temperature as compared with pure iron thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345812
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  • 6
    Electronic Resource
    Electronic Resource
    The evolution of sputtered iron nitride thin films under thermal treatment (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 261-267 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal evolution of reactively sputtered iron nitride thin films has been investigated by x-ray diffraction, Mössbauer conversion electron spectroscopy, transmission electron microscopy, and magnetic measurements. The results show that, independently of the original nitrogen content of the films, a similar composition of the end products after the 500 °C annealings is reached, being all composed of α-Fe plus γ'-Fe4N in a wide range of relative proportions. The magnetic characteristics, however, are different depending on the nitrogen content of the as-deposited films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347761
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  • 7
    Electronic Resource
    Electronic Resource
    Structure and composition of amorphous Ge1−xSnx thin films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5596-5598 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The composition and bonding configuration of amorphous germanium-tin (a-Ge1−xSnx) thin films are reported (0≤x〈0.3). Mössbauer spectroscopy analyses show that under the reported deposition conditions all tin atoms enter the a-Ge network in a perfect substitutional way, i.e., in a covalent tetrahedral configuration. The absence of defect structures in the tin sites is discussed and compared with results on films prepared under different conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340338
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  • 8
    Electronic Resource
    Electronic Resource
    Mössbauer study of hydrogenated amorphous germanium-tin thin-film alloys (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2083-2090 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work reports on the structure of defects around Sn atoms in amorphous germanium-tin alloys deposited by the rf sputtering of compound targets. The influence of atomic hydrogen on the structure of such defects is reported for the first time. The samples were analyzed by Rutherford backscattering spectrometry and conversion electron Mössbauer spectroscopy. The main conclusion of this research is that, besides the known substitutional position of Sn atoms in the a-Ge network, a new Sn bonding configuration appears, which may be at the origin of the degradation of the optoelectronic properties of the alloy found experimentally. This new configuration is an octahedrally coordinated Sn atom resulting from the trapping of Ge vacancies by Sn atoms, the energetically favored final site being the tin atom in the center of the Ge relaxed divacancy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344301
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  • 9
    Electronic Resource
    Electronic Resource
    Dopants redistribution during titanium-disilicide formation by rapid thermal processing (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1228-1230 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Redistribution of implanted As (5×1015 cm−2, 150 keV) and Sb (1×1015 cm−2 , 200 keV) due to TiSi2 formation by rapid thermal processing was investigated by means of backscattering spectroscopy. By choosing properly the rapid thermal processing parameters, low resistance uniform silicides layers (typically 14 μΩ cm) were obtained, and dopant loss by out-diffusion and redistribution of the dopant were made negligible. High peak concentrations of dopant within silicon substrate, beneath the silicide, were obtained for all processing times.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338177
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  • 10
    Electronic Resource
    Electronic Resource
    Comparative study of intermetallic phases formed by direct ion implantation and radiation enhanced diffusion of tin in two kinds of steel (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 773-778 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface layers of high-carbon and stainless steel samples, treated by both direct ion implantation of Sn+ ions and radiation enhanced diffusion of tin, are analyzed by means of Rutherford backscattering and 119Sn and 57Fe conversion electron Mössbauer spectroscopy. The intermetallic phases formed in the treated surfaces are determined and their thermal evolution is established. The compositions and phase transformations observed in the surfaces of the samples treated by both direct ion implantation and radiation-enhanced diffusion are very similar, and this similarity indicates that these two treatment processes are essentially equivalent for practical applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336195
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