Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
63 (1988), S. 5596-5598
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The composition and bonding configuration of amorphous germanium-tin (a-Ge1−xSnx) thin films are reported (0≤x〈0.3). Mössbauer spectroscopy analyses show that under the reported deposition conditions all tin atoms enter the a-Ge network in a perfect substitutional way, i.e., in a covalent tetrahedral configuration. The absence of defect structures in the tin sites is discussed and compared with results on films prepared under different conditions.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.340338
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |