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  • Articles: DFG German National Licenses  (27)
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  • Articles: DFG German National Licenses  (27)
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  • 1
    Electronic Resource
    Electronic Resource
    Compositional and magnetic properties of iron nitride thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7514-7519 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The compositional and magnetic properties of iron-nitride thin films deposited by dc reactive magnetron sputtering under various nitrogen partial pressure conditions have been investigated by x-ray diffraction, Mössbauer and Auger electron spectroscopy as well as magnetic measurements. The x-ray diffraction patterns indicate a mixed phase composition. 57Fe Mössbauer spectroscopy shows that part of the nitrogen atoms are randomly distributed on interstitial sites with the formation of nonstoichiometric compounds. The excessive width of the Mössbauer lines indicates the degree of disorder of the different iron nitride precipitates. The nitrogen concentration as a function of depth is obtained by sputter-etched Auger electron spectroscopy. Furthermore, the ferromagnetic films show moderate saturation magnetization and coercivities at room temperature as compared with pure iron thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345812
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Structure and composition of amorphous Ge1−xSnx thin films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5596-5598 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The composition and bonding configuration of amorphous germanium-tin (a-Ge1−xSnx) thin films are reported (0≤x〈0.3). Mössbauer spectroscopy analyses show that under the reported deposition conditions all tin atoms enter the a-Ge network in a perfect substitutional way, i.e., in a covalent tetrahedral configuration. The absence of defect structures in the tin sites is discussed and compared with results on films prepared under different conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340338
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  • 3
    Electronic Resource
    Electronic Resource
    Mössbauer study of hydrogenated amorphous germanium-tin thin-film alloys (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2083-2090 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work reports on the structure of defects around Sn atoms in amorphous germanium-tin alloys deposited by the rf sputtering of compound targets. The influence of atomic hydrogen on the structure of such defects is reported for the first time. The samples were analyzed by Rutherford backscattering spectrometry and conversion electron Mössbauer spectroscopy. The main conclusion of this research is that, besides the known substitutional position of Sn atoms in the a-Ge network, a new Sn bonding configuration appears, which may be at the origin of the degradation of the optoelectronic properties of the alloy found experimentally. This new configuration is an octahedrally coordinated Sn atom resulting from the trapping of Ge vacancies by Sn atoms, the energetically favored final site being the tin atom in the center of the Ge relaxed divacancy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344301
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  • 4
    Electronic Resource
    Electronic Resource
    Dopants redistribution during titanium-disilicide formation by rapid thermal processing (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1228-1230 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Redistribution of implanted As (5×1015 cm−2, 150 keV) and Sb (1×1015 cm−2 , 200 keV) due to TiSi2 formation by rapid thermal processing was investigated by means of backscattering spectroscopy. By choosing properly the rapid thermal processing parameters, low resistance uniform silicides layers (typically 14 μΩ cm) were obtained, and dopant loss by out-diffusion and redistribution of the dopant were made negligible. High peak concentrations of dopant within silicon substrate, beneath the silicide, were obtained for all processing times.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338177
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  • 5
    Electronic Resource
    Electronic Resource
    Comparative study of intermetallic phases formed by direct ion implantation and radiation enhanced diffusion of tin in two kinds of steel (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 773-778 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface layers of high-carbon and stainless steel samples, treated by both direct ion implantation of Sn+ ions and radiation enhanced diffusion of tin, are analyzed by means of Rutherford backscattering and 119Sn and 57Fe conversion electron Mössbauer spectroscopy. The intermetallic phases formed in the treated surfaces are determined and their thermal evolution is established. The compositions and phase transformations observed in the surfaces of the samples treated by both direct ion implantation and radiation-enhanced diffusion are very similar, and this similarity indicates that these two treatment processes are essentially equivalent for practical applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336195
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  • 6
    Electronic Resource
    Electronic Resource
    The evolution of sputtered iron nitride thin films under thermal treatment (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 261-267 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal evolution of reactively sputtered iron nitride thin films has been investigated by x-ray diffraction, Mössbauer conversion electron spectroscopy, transmission electron microscopy, and magnetic measurements. The results show that, independently of the original nitrogen content of the films, a similar composition of the end products after the 500 °C annealings is reached, being all composed of α-Fe plus γ'-Fe4N in a wide range of relative proportions. The magnetic characteristics, however, are different depending on the nitrogen content of the as-deposited films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347761
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  • 7
    Electronic Resource
    Electronic Resource
    Comment on "Ion mixing of metal/Al bilayers near 77 K'' [Appl. Phys. Lett. 54, 413 (1989)] (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 513-514 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The correct mixing efficiency for the Fe/Al bilayer (900 keV Xe +3 , 77K) is presented in the context of the recent analysis by Ma, IE.E., Work man, W.L〉, Johnson, W.L., and Nicolet, M.A. (AIP)
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101864
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of the surface deposition of nitrogen on the thermal oxidation of silicon in O2 (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5579-5581 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen was deposited on the surface layers of Si(100) by ion implantation at a very low energy (approximately 20 eV), at fluences between 1 and 10×1014 cm−2. The samples were thermally oxidized in dry O2 at 1050 °C, and the areal densities and profiles of N and O were determined by nuclear reaction analysis and narrow nuclear resonance profiling, evidencing that: (i) the retained amounts of N just after ion beam deposition stayed in the range between 0.3 and 7×1014 cm−2; (ii) the oxide growth is influenced strongly by the presence of nitrogen, the thickness of the oxide films (which remained between 4 and 30 nm) decreased with the increase of the areal density of nitrogen; (iii) N is partially removed from the system as oxidation proceeds. These observations are discussed in terms of current models for the thermal growth of silicon oxide in the presence of N. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367396
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  • 9
    Electronic Resource
    Electronic Resource
    Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3601-3603 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Initial stages of oxidation of single-crystal, Si-faced silicon carbide were investigated using ion scattering and angle-resolved x-ray photoelectron spectroscopies. The very first oxidation products are shown to be silicon oxycarbides (SiCxOy), while, for longer oxidation times, a mixture of SiCxOy and SiO2 is formed in the near-surface region of the growing oxide film. The composition of the near-surface region of such thin films is very similar to that reported in previous investigations for the near-interface region when thicker oxides films are grown on SiC. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1374518
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  • 10
    Electronic Resource
    Electronic Resource
    Composition, atomic transport, and chemical stability of ZrAlxOy ultrathin films deposited on Si(001) (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1998-2000 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of a ZrAlxOy film sputtered on Si upon thermal annealing in vacuum or in O2 was investigated. X-ray diffraction indicated that the as-deposited film was amorphous and remained so after annealing. Rutherford backscattering, narrow nuclear resonance profiling, and low-energy ion scattering provided the average composition of the film and the depth distributions of different elements. Chemical analysis of these elements was accessed by x-ray photoelectron spectroscopy. Annealing in vacuum produced thickness inhomogeneities and/or transport of very small amounts of Si from the substrate into the overlying film, with formation of Si precipitates. Annealing in O2 led to oxygen exchange throughout the film, as well as Si transport in slightly higher amounts than in vacuum. Differently from the observed upon annealing in vacuum, Si was either incorporated into the Zr,Al–O framework or oxidized in SiO2. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405808
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