Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    The evolution of sputtered iron nitride thin films under thermal treatment (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 261-267 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal evolution of reactively sputtered iron nitride thin films has been investigated by x-ray diffraction, Mössbauer conversion electron spectroscopy, transmission electron microscopy, and magnetic measurements. The results show that, independently of the original nitrogen content of the films, a similar composition of the end products after the 500 °C annealings is reached, being all composed of α-Fe plus γ'-Fe4N in a wide range of relative proportions. The magnetic characteristics, however, are different depending on the nitrogen content of the as-deposited films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347761
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Isotopic tracing during rapid thermal growth of silicon oxynitride films on Si in O2, NH3, and N2O (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2007-2009 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We performed isotopic tracing of O, N, and H during rapid thermal growth of silicon oxynitride films on silicon in two different sequential, synergistic gas environments: O2, followed by NH3, then followed by N2O; and N2O, followed by NH3. Using nuclear reaction analysis and high resolution depth profiling, we demonstrate that the oxynitride films grow by means of thermally activated atomic transport involving the three traced species. Concomitantly, isotopic exchange processes take place. Growth in these sequential gas environments leads to oxynitride films with N concentration profiles and H concentrations different from those obtained by commonly used processes like thermal growth in N2O only or thermal nitridation of SiO2 films in NH3. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118804
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Comment on "Ion mixing of metal/Al bilayers near 77 K'' [Appl. Phys. Lett. 54, 413 (1989)] (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 513-514 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The correct mixing efficiency for the Fe/Al bilayer (900 keV Xe +3 , 77K) is presented in the context of the recent analysis by Ma, IE.E., Work man, W.L〉, Johnson, W.L., and Nicolet, M.A. (AIP)
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101864
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Effects of the surface deposition of nitrogen on the thermal oxidation of silicon in O2 (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5579-5581 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen was deposited on the surface layers of Si(100) by ion implantation at a very low energy (approximately 20 eV), at fluences between 1 and 10×1014 cm−2. The samples were thermally oxidized in dry O2 at 1050 °C, and the areal densities and profiles of N and O were determined by nuclear reaction analysis and narrow nuclear resonance profiling, evidencing that: (i) the retained amounts of N just after ion beam deposition stayed in the range between 0.3 and 7×1014 cm−2; (ii) the oxide growth is influenced strongly by the presence of nitrogen, the thickness of the oxide films (which remained between 4 and 30 nm) decreased with the increase of the areal density of nitrogen; (iii) N is partially removed from the system as oxidation proceeds. These observations are discussed in terms of current models for the thermal growth of silicon oxide in the presence of N. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367396
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Structure and composition of amorphous Ge1−xSnx thin films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5596-5598 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The composition and bonding configuration of amorphous germanium-tin (a-Ge1−xSnx) thin films are reported (0≤x〈0.3). Mössbauer spectroscopy analyses show that under the reported deposition conditions all tin atoms enter the a-Ge network in a perfect substitutional way, i.e., in a covalent tetrahedral configuration. The absence of defect structures in the tin sites is discussed and compared with results on films prepared under different conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340338
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Dopants redistribution during titanium-disilicide formation by rapid thermal processing (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1228-1230 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Redistribution of implanted As (5×1015 cm−2, 150 keV) and Sb (1×1015 cm−2 , 200 keV) due to TiSi2 formation by rapid thermal processing was investigated by means of backscattering spectroscopy. By choosing properly the rapid thermal processing parameters, low resistance uniform silicides layers (typically 14 μΩ cm) were obtained, and dopant loss by out-diffusion and redistribution of the dopant were made negligible. High peak concentrations of dopant within silicon substrate, beneath the silicide, were obtained for all processing times.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338177
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Comparative study of intermetallic phases formed by direct ion implantation and radiation enhanced diffusion of tin in two kinds of steel (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 773-778 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface layers of high-carbon and stainless steel samples, treated by both direct ion implantation of Sn+ ions and radiation enhanced diffusion of tin, are analyzed by means of Rutherford backscattering and 119Sn and 57Fe conversion electron Mössbauer spectroscopy. The intermetallic phases formed in the treated surfaces are determined and their thermal evolution is established. The compositions and phase transformations observed in the surfaces of the samples treated by both direct ion implantation and radiation-enhanced diffusion are very similar, and this similarity indicates that these two treatment processes are essentially equivalent for practical applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336195
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Isotopic substitution of N, O, and Si in the thermal oxidation of nitrogen-deposited silicon (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1872-1874 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen was deposited on the surface of Si(100) wafers by ion implantation at a very low energy (approximately 20 eV), at fluences between 1 and 10×1014 cm−2. The samples were thermally oxidized in dry O2 at temperatures between 800 and 1050 °C. Atomic transport of the chemical species involved in the process was investigated by isotopic tracing of N, O, and Si, using depth profiling with nanometric resolution. The obtained results indicate that: (i) the nitrogen atoms deposited on the Si surface are redistributed during thermal oxidation in O2 within the silicon oxide (oxynitride) film, with maxima at the near-surface and near-interface regions; (ii) during growth, O is fixed not only in the near-interface and near-surface regions like in the thermal growth of SiO2 films on Si, but also in the bulk of the growing oxide (oxynitride) film; and (iii) Si is immobile during the thermal oxidation process. The observed modifications in the mechanisms of thermal growth of SiO2 (SiOxNy) films on Si due to the presence of N are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123697
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    On the behavior of deuterium in ultrathin SiO2 films upon thermal annealing (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 450-452 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Following the observation of the large isotopic effect in D2 passivated gate dielectrics [J. Lyding, K. Hess, and I. C. Kizilyalli, Appl. Phys. Lett. 68, 2526 (1996)], we studied the behavior of deuterium in ultrathin SiO2 films by nuclear reaction analysis techniques. Accurate concentrations of deuterium in the films, deuterium depth distributions, and deuterium removal from the film upon thermal annealing in vacuum have been examined. For D2 passivated films, we found rather high concentrations of deuterium near the SiO2/Si interface, well above both the solubility of deuterium in silica and the maximum concentration of electrically active defects at the interface. Our results suggest a complex multistep mechanism of thermally activated deuterium removal from the film, which probably consists of D detrapping, diffusion, and desorption steps. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120801
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Dry oxidation mechanisms of thin dielectric films formed under N2O using isotopic tracing methods (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2366-2368 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the mechanisms of thermal reoxidation in dry O2 of silicon oxynitride films prepared by processing Si(100) wafers in a rapid thermal furnace in a pure nitrous oxide (N2O) ambient, using isotopic tracing of oxygen and nitrogen. Standard nuclear reaction analyses for the measurement of the total amounts of the different isotopes, and very narrow resonant nuclear reactions for high resolution (1 nm) depth profiling of these elements were used. The silicon oxynitride films grown in pure 15N216O were 8-nm thick, with a small amount of nitrogen localized near the interfacial region. Under reoxidation in dry 18O2, the thickness of the dielectric film increased while a pronounced isotopic exchange took place between the 18O from the gas and the 16O from the film, as well as a significant loss of 15N. This is in contrast with the reoxidation in dry O2 of pure SiO2 films, where the oxygen exchange is rather small as compared to that observed in the present case. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116135
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...