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Refracted X-ray Fluorescence (RXF) on Si single crystal and GaAs (1991)

Sasaki, Y. C. ; Hirokawa, K.

Springer

Applied physics 52 (1991), S. 28-32

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ISSN: 1432-0630

Keywords: 42.10.Fa ; 07.60.Hv ; 78.70.Ck

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract The Refracted X-ray Fluorescence (RXF) method can obtain the information about surfaces and interfaces: for example, surface electron density, chemical condition and surface roughness. We evaluated surfaces and interfaces of ultrathin films by using RXF method, and we measured the average lattice constant of a ultrathin GaAs film, the top-layer of a GaAs substrate and the surface roughness of the Si substrate below a ultrathin GaAs film grown by MBE.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00323681

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