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  • 79.60  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Effects of defects on the electronic structure of ion-irradiated graphite (1994)
    Springer
    Applied physics 58 (1994), S. 437-440 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 79.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effects of N+ and Ne+ ions impinging on a graphite target are studied by ultraviolet photoelectron spectroscopy. Changes in the valence band of the N+-irradiated graphite surface are found to be inherently different from the Ne+-ion-induced structural modification. They reveal a build-up of additional π-defect states at the top of the band, and confirm what appears to be a distinct character of the influence of nitrogen on an amorphous carbon matrix.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332433
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Amorphous hydrogenated carbon films on semiconductors (1989)
    Springer
    Applied physics 48 (1989), S. 549-558 
    Details
    ISSN: 1432-0630
    Keywords: 79.60 ; 73.40 ; 73.60 ; 73.60H ; 71.25M ; 81.15 ; 46.30P
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The interface properties of hydrogenated amorphous carbon films (a-C:H) on Si and GaAs substrates have been studied by in-situ photoelectron spectroscopy measurements. The a-C:H films have been deposited by direct ion beam deposition. Distinct differences in the interface formation have been observed during film depositon on the two substrates. The data clearly reveal a decomposition of the GaAs at the interface which can be related to the reduced adhesion of a-C: H on the compound semiconductor substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617856
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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