ISSN:
1432-0630
Keywords:
85.42
;
81.15
;
81.60
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Ultra-fine silicon quantum wires with SiO2 boundaries were successfully fabricated by combining SiGe/Si heteroepitaxy, selective chemical etching and subsequent thermal oxidation. The results are observed by scanning electron microscopy. The present method provides a very controllable way to fabricate ultra-fine silicon quantum wires, which is fully compatible with silicon microelectronic technology. As one of the key processes of controlling the lateral dimensions of silicon quantum wires, the wet oxidation of silicon wires has been investigated, self-limiting wet oxidation phenomenon in silicon wires is observed. The characteristic of the oxidation retardation of silicon wires is discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01567328
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