ISSN:
1432-0630
Keywords:
42.55.Gp
;
68.55
;
81.15.Fg
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Silicon-nitride films were deposited on silicon waters by XeCl (308 nm) excimer-laser ablation of silicon in low-pressure (0.05–5 mbar) ammonia atmospheres. Series of 10 000 pulses at the repetition rate of 8 Hz were directed to the target surface. The fluence was set at about 5 J/cm2. Pulse duration was about 30 ns. The deposited films were characterized by different techniques (X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectrometry, scanning electron microscopy, profilometry). Silicon-nitride films with thickness close to 1 μm were obtained under specific experimental conditions.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01538403
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