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  • 79.20  (1)
  • 85.60  (1)
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  • 1
    Digitale Medien
    Digitale Medien
    Epitaxial growth of ferroelectric PLZT thin film and their optical properties (1980)
    Springer
    Applied physics 21 (1980), S. 339-343 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 42.80 ; 78.20 ; 85.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A series of experiments for growing epitaxial PLZT thin films has been made with rf sputtering. X-ray and electron diffraction analyses confirm that the fabricated films grow epitaxially on SrTiO3 and MgO crystals. A good transparency in the region above 0.4 μm to infrared with good ferroelectric properties is obtained. Propagation loss of He−Ne laser light is less than 6 dB/cm, and the PLZT thin film is a promising candidate for the optical modulator and other functional elements for integrated optics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00895925
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    A study of electronic states near the interface in ferroelectric-semiconductor heterojunction prepared by rf sputtering of PbTiO3 (1982)
    Springer
    Applied physics 28 (1982), S. 161-166 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 73.20 ; 73.40 ; 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Interface states in the ferroelectric-semiconductor junction have been investigated from analyses of DLTS andC-V data. Two trap levels are located at 0.21 and 0.36 eV below the conduction band near the silicon side of the interface in the MFS (Metal-Ferroelectric-Semiconductor) structure. The interface states density has been drastically reduced by putting an oxide layer between ferroelectric and semiconductor with certain heat treatment in H2 atmosphere at 500 °C. It has been found that the MFMOS (Metal-Ferroelectric-Metal-Oxide-Semiconductor) structure shows the least interface states density (less than 1011cm−2eV−1) with the maximal dielectric constant of PbTiO3 thin films.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00617981
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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