ISSN:
0032-3888
Keywords:
Chemistry
;
Chemical Engineering
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
A Model 111 Perkin-Elmer projection printer, with a 3100 Å exposure capability was evaluated for far-UV printing. The improvement found in resolution at 3100 Å compared to 4000 Å was roughly proportional to the mean exposure wavelengths in the near and far-UV as verified by electrical probe yield data of printed meander patterns. The processing latitude of various photoresists of the diazide type was found in the 1.0 μm and 2.5 μm line width range by electrically measuring the line widths of meanders etched into metal films using the appropriate resist mask. Exposures were varied continuously on individual wafers so that the resist linewidth change vs exposure could be determined using a minimum number of wafers. It was found that resists such as AZ-2400 which pass much of the exposing radiation have better latitude than those that absorb most of the exposing radiation (HPR-204, MPR). Some new, unconventional resists studied have even greater latitude than the diazide resists. Design compensations which have to be made for proximity and related effects at fine dimension are in the 0.1 μm to 0.2 μm range. Depth-of-focus for the printer studied seems to be adequate for careful work at 1.0 μm using 3100 A exposure. The overlay printing capability, which includes mask quality, operator error, and printer optics and stability, is within 0.25 μm from level-to-level.
Additional Material:
9 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/pen.760201613
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