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  • 1
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A procedure has been developed for analyzing the elongation of a specimen in a tensile test for the elastic, anelastic, and plastic components of strain. The procedure was applied to bisphenol-A polycarbonate, which showed the division between the anelastic and plastic components to be justified and gave the following results. First, the elastic modulus was found to be essentially constant, independent of stress up to at least 7,000 psi. Second, the strain accumulated at the yield point was found to be mainly anelastic and recoverable with release of the stress. Third, plastic or non-recoverable strain was mainly accumulated only beyond the yield point. These latter two results suggest that anelasticity is important for ductility. The relatively large anelastic response at low stresses that contribute to the ductility of polycarbonate probably arises from both the large size of the moving segment and the large low temperature loss process.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 23 (1995), S. 665-672 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A chemical bevelling technique has been developed to synthesize high-magnification bevels in gallium arsenide for SIMS linescanning and imaging. Bevels have been prepared in gallium arsenide substrate material, in gallium arsenide implanted with aluminium and in two delta-doped (aluminium) GaAs test structures. The accuracy, sensitivity, dynamic range and depth resolution-depth characteristics of the bevel and linescan approach have been compared to conventional SIMS depth profiling. Images of the bevelled structures have been used to obtain a quick view of the features of interest. Linescans have yielded an aluminium profile from the aluminium implant that is very similar to that from a SIMS depth profile. Linescan results from the aluminium deltas in gallium arsenide indicate that depth resolutions of a few nanometers can be retained to depths of several microns. The depth resolution of the deltas has been measured as a function of bevel magnification and a theory has been developed to explain the results. A peak width (resolution) of 2.2 nm for an aluminium delta has been achieved at a bevel magnification of 6000 using a 15 keV 16O2+ ion beam, and a depth resolution limit of 1.3 nm has been deduced by extrapolation to infinite bevel magnification. The combined effects of beam-induced mixing, microtopography and the escape depth of the secondary ions is a broadening of 2.0 nm for these conditions.
    Additional Material: 11 Ill.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 254-260 
    ISSN: 0142-2421
    Keywords: InGaAs ; RBS ; absolute composition determination ; measurement accuracy ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Rutherford backscattering is used to obtain absolute compositional data from InGaAs thin films without any reference standards. Carbon-doped InxGa1-xAs thin films with compositions varying between 0.02〈x〈0.4 have been analysed and values of x obtained with an estimated accuracy of ∽1% in most cases. The observed variation in two measurements of a set of nine samples with a range of values of x has a mean of 1.000 and a standard deviation of 2.2%. This observed error is not inconsistent (at the 5% significance level) with the estimated error. The analytical method described is valid for many compound thin films. © 1997 by John Wiley & Sons, Ltd.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
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