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  • Chemistry  (6)
  • 1
    Electronic Resource
    Electronic Resource
    Addition of a single chemical functional group to a polymer surface with a mass-separated low-energy ion beam (1995)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 23 (1995), S. 873-878 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A mass-separated low-energy ion beam system was used to deliver pure OH+ and NH+ to 15nm thick polystyrene films on silicon in ultrahigh vacuum. This was done in an effort to produce specific surface chemical functional groups. X-ray photoelectron spectroscopy showed that when the bombardment energy of OH+ exceeded 10 eV, or the dose was higher than 1 × 1016 ions cm-2, a mixture of C—OH, C—C=O and C—COOH groups was produced, along with severe damage to the aromatic rings. However, for bombardment at 10 eV with a dose of 1 × 1016 ions cm-2, only C—OH (or COR) groups were found. Similarly, bombardment with NH+ at 10 eV and a dose 1 × 1016 ions cm-2 induced incorporation of a single nitrogen-containing functionality. The C 1s data indicated that the major chemical functionality on such surfaces in a C—NH2 (or C—NHR) group with a minor component of C—(NH2)2. Hence, surface functionality can indeed be controlled by altering the molecular nature, energy and dose of the bombarding species.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740231304
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Implantation of 29Si into GaAs {100}: Surface analysis and modelling of the dopant distribution (1988)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 13 (1988), S. 51-54 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: SIMS concentration profiles have been measured for 29Si ions implanted into GaAs {100} in the energy range of 30 to 400 keV and at doses from 5 × 1012 to 5 × 1014 cm-2. It was found that these profiles could be fitted successfully to Pearson IV distributions enabling the establishment of projected range statistics for modelling purposes. The Si concentration profiles were found to be a function of not only implantation energy but also of the tilt and twist angles of the substrate wafer and of the implant dose. Raman spectroscopy was used to monitor the disorder induced in the GaAs substrate by the Si implantation. The SIMS profiles are discussed in terms of planar channelling of the Si ions and the Raman data are used in interpreting the dose dependence of the profiles.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740130111
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Stabilization of charge on electrically insulating surfaces during SIMS experiments - experimental and theoretical studies of the specimen isolation method (1985)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 7 (1985), S. 275-281 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Recent experiments have shown that secondary ion mass spectrometric (SIMS) measurements of insulator surfaces can be greatly facilitated by the use of a charged aperture located immediately above the analysis area (the ‘specimen isolation technique’). This allows the surface potential within the aperture area to be stabilized. Charging is stabilized when the potential difference between the surface and the aperture becomes large enough that excessive charge, in the form of secondary electrons, is drained away from the surface to the aperture. The potential difference generated on such insulating surfaces can be measured experimentally by varying the voltages applied to the electrostatic analyzer to measure the secondary ion intensity as a function of kinetic energy. Such measurements have been carried out on a Cameca IMS-3F instrument for a range of aperture dimensions and for different primary and secondary ions. The surface potential can be stabilized at a potential readily measurable by the electrostatic analyzer for both O- and Cs+ ion beams. The mechanism for this stabilization has been analyzed through calculations of two dimensional contours for the region around the specimen holder. For surfaces with a very high charging potential (〉600 V), potential wells which can trap ions of low kinetic energy develop near the surface. Element and oxide secondary ion kinetic energy distribution curves, taken under specimen isolation conditions, which differ from those obtained under normal non-charging SIMS conditions, are evidence for such ion trapping.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740070605
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Combined EBIC - Auger analysis of AuGeNi/n-GaAs ohmic contact formation (1988)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 11 (1988), S. 596-598 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Electron beam induced current imaging has been used to monitor the dynamic changes of the metal-semiconductor interface of AuGeNi/n-GaAs during annealing at 300°C. The reacted interface was then revealed by argon ion etching of the metal overlayer, and analyzed by secondary electron and Auger electron imaging. The combined EBIC-Auger imaging of the reacted interface indicates that the formation of the ohmic contact starts at localized areas where small Ni- and As-rich grains are formed. The results also show that this combined EBIC-Auger imaging technique is particularly suitable for investigating the mechanism of degradation of Schottky contacts.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740111203
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Core-Level binding energy shifts on inp surfaces induced by sputtering and annealing (1988)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 12 (1988), S. 321-322 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740120509
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Charge stabilization and ion trapping under specimen isolation conditions during Sims analysis (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 18 (1992), S. 262-268 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Specimen isolation (SI), an extreme form of kinetic energy filtration, has been shown to be an effective tool for controlling the problems of sample charging and molecular interferences often encounted in secondary ion mass spectrometry (SIMS). In this study the mechanisms involved in the charge stabilization, under both positive and negative primary beam bombardment, were examined more closely. This was facilitated by the introduction of a resistor into the SI configuration, allowing for in situ sample potential control, and the use of computer simulations. The formation of low-energy ion traps at the sample surface under extreme SI conditions was also directly recorded, showing good agreement with the computer simulations carried out.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740180404
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    Paper (German National Licenses)
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