ISSN:
1432-0630
Keywords:
Semiconductor lasers
;
Heterojunction theory
;
I–V characteristics
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract It is shown that carrier degeneracy plays an important role in determining the electrical properties of double heterostructure injection lasers. Correct statistical treatment of the charge cariers in the device leads to a generalised Einstein relation between the carrier transport coefficients. Such a relation (for both electrons and holes) is used in numerical solutions of semiconductor transport equations applicable to the laser. Experimentally observed I–V characteristics of the laser are explained in terms of carrier degeneracy effects.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00903953
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