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Digitale Medien

The effects of carrier degeneracy on transport properties of the double heterostructure injection laser (1976)

Shore, K. A. ; Adams, M. J.

Springer

Applied physics 9 (1976), S. 161-164

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Details

ISSN: 1432-0630

Schlagwort(e): Semiconductor lasers ; Heterojunction theory ; I–V characteristics

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract It is shown that carrier degeneracy plays an important role in determining the electrical properties of double heterostructure injection lasers. Correct statistical treatment of the charge cariers in the device leads to a generalised Einstein relation between the carrier transport coefficients. Such a relation (for both electrons and holes) is used in numerical solutions of semiconductor transport equations applicable to the laser. Experimentally observed I–V characteristics of the laser are explained in terms of carrier degeneracy effects.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00903953

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