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  • 1
    Electronic Resource
    Electronic Resource
    Red- and blue-light emission from free-standing porous silicon (1996)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 18 (1996), S. 1149-1157 
    Details
    ISSN: 0392-6737
    Keywords: Optoelectronic devices ; Other solid inorganic materials ; Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter ; Interfaces ; heterostructures ; nanostructures ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We report the observation of strong red- and blue-light emission in free-standing porous-silicon samples prepared fromn + substrates at different anodization current densities. The surface morphology of the free-standing samples has been analyzed by means of atomic-force microscopy. Upon excitation with nanosecond pulses at room temperature, both blue and red luminescence bands appear, peaked around 3.2 and 2.0 eV, respectively. An extensive study of the time-resolved behavior of the photoluminescence signal reveals different dynamical features for the two spectral regions. The observed long decay time (several μs) of the red band reflects the predominant effect of non-radiative processes and is consistent with models based on excition diffusion through the interconnected silicon nanocrystals (quantum dots) skeleton. The relatively fast blue-band decay time (≈400 ns) is shown to be related to non-radiative recombination through trap states at the silicon nanocrystal surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02464692
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Current-voltage characteristics of porous-silicon structures (1996)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 18 (1996), S. 1197-1204 
    Details
    ISSN: 0392-6737
    Keywords: Optoelectronic devices ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary I–V DC characteristics have been measured on metal/ porous-silicon structures. In particular, the measurements on metal/ free-standing porous-silicon film/metal devices confirmed the result, already obtained, that the metal/poroussilicon interface plays a crucial role in the transport of any device. Four-contacts measurements on free-standing layers showed that the current linearly depends on the voltage and that the conduction process is thermally activated, the activtion energy depending on the porous silicon film production parameters. Finally, annealing experiments performed in order to improve the conduction of rectifiyng contacts, are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02464697
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
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