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Direct synthesis of β-FeSi2 by ion beam mixing of Fe/Si bilayers (2000)

Milosavljevic, M. ; Dhar, S. ; Schaaf, P. ; [et al.]

Springer

Applied physics 71 (2000), S. 43-45

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ISSN: 1432-0630

Keywords: PACS: 61.80.Jh; 68.55.Nq; 61.82.Fk

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract. The iron di-silicide β-FeSi2 is a promising direct band gap semiconductor but difficult to produce. Here, the successful direct synthesis of this phase by ion beam mixing of Fe/Si bilayers at temperatures in the range of 450 to 550 °C is reported. The obtained single-phase β-FeSi2 layers and their structure are confirmed by Rutherford backscattering spectrometry, X-ray diffraction and conversion electron Mössbauer spectroscopy.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/s003390050023

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