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  • 1
    Digitale Medien
    Digitale Medien
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 24 (1996), S. 252-256 
    ISSN: 0142-2421
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Physik
    Notizen: X-ray photoelectron spectroscopy (XPS) of Ne ion-bombarded polymer has been carried out in order to examine the cause of HeLa cell adhesion control on polymers. Substrates used were polystyrene (PS) and oxygen plasma-treated polystyrene (PS-O). Neon bombardments into the patterned region of PS and PS-O were performed at an energy of 150 keV with fluences of 1×1014 and 1×1015 ions cm-2. The surface chemical bonding states were investigated by XPS. In HeLa cell adhesion measurements, the Ne-bombarded region of PS with a fluence of 1×1015 ions cm-2 exhibits higher adhesion and spreading of HeLa cells than the unbombarded region. On the contrary, it is found that the Ne-bombarded region of PS-O inhibits HeLa cell adhesion. The XPS results show that Ne bombardment to PS or PS-O destroys the original chemical bonds and consequently produces new functional groups. It is considered that the drastic change of surface chemical bonding states from the pristine states induced by Ne bombardment leads to a clear distinction between increasing and inhibiting HeLa cell adhesion.
    Zusätzliches Material: 7 Ill.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 24 (1996), S. 578-582 
    ISSN: 0142-2421
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Physik
    Notizen: Angle-dependent high-resolution XPS spectra of S 2p, In 3d5/2 and P 2p have been measured on the InP(001) sample etched chemically, treated with (NH4)2Sx at room temperature (RT), exposed to air at RT and annealed at 400°C in a vacuum. Three kinds (S-I, S-II and S-III) of chemical states of sulphur on the (NH4)2Sx-treated InP(001) surface at RT are found. It is suggested that S-I, S-II and S-III correspond to sulphur in the bulk, sulphur bridge-bonded to indium on the surface and elemental sulphur, respectively. Chemical state of S-III is decreased for the treated sample exposed to air at RT for 1 month. It is removed upon annealing the sample at 400°C in a vacuum, while S-I and S-II remain on the surface. The thickness of the sulphide layer on the annealed surface is estimated to be about one monolayer. Angle-dependent XPS spectra of S 2p and In 3d5/2 are discussed.
    Zusätzliches Material: 4 Ill.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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