ISSN:
1572-8986
Keywords:
Plasma etching
;
modeling
;
SF6
;
O2
;
gas-phase reactions
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Technology
Notes:
Abstract A model has been developed to describe the chemistry which occurs in SF6/O2 plasmas and the etching of silicon in these plasmas. Emphasis is placed nn the gas-phase free radical reactions, and the predictions n( the model are compared with experimental results. Forty-seven reactions are included, although a subset of 18 reactions describes the chemistry equally well. Agreement between the calculated and measured concentrations of stable products downstream of the plasma is better than a factor of 2. The need for additional kinetic data and fàr well-characterized diagnostic studies of SF6/O2 plasmas is discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01447127
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